eda課程設計報告n溝道m(xù)os管工藝模擬與器件模擬-資料下載頁
2024-10-07 08:06本頁面
【導讀】學會用Silvaco軟件提取MOS晶體管的各種參數，掌握用SILVACO. 區(qū)薄層電阻等參數。特性曲線，并從中提取MOS管的閾值電壓和?的濃度，注入能量，以及阱區(qū)的推進。量為3e13，能量為20kev。在這條extract語句中，1dvt指測量一維閾值電壓；ntype指器件類型；荷；vb=柵極偏置0V。這將強制使得仿真在兩維中。初始化信息如下所示。硼雜質的摻雜分布將會如圖所示顯現出來。氧化條件是3分鐘，900度，1個大氣壓下的濕法氧化。fermi模型通常用于沒有損傷的襯底，并且摻雜濃度小于1x1020cm-3。在源極和漏極植入之前，需要進行側墻隔離氧化層的淀積。為了形成氧化隔離，必須進行干刻蝕。
【正文】 ign parameters extract final S/D Xj extract name=nxj xj silicon =1 = =1 extract the N++ regions sheet resistance extract name=n++ sheet rho material=Silicon =1 = =1 extract the long chan Vt extract name=n1dvt 1dvt ntype vb= qss=1e10 = extract the surface conc under the channel. extract name=chan surf conc impurity=Net Doping \ material=Silicon =1 = structure mirror right electrode name=gate x= electrode name=source x= electrode name=drain x= electrode name=substrate backside structure outfile= tonyplot yaojinpeng_nmos*.str go atlas mesh infile= set material models models cvt srh print contact name=gate interface qf=2e10 method gummel newton solve init solve vgate= outfile=solve_tmp1 solve vgate= outfile=solve_tmp2 solve vgate= outfile=solve_tmp3 solve vgate= outfile=solve_tmp4 load infile=solve_tmp1 log outf= solve name=drain vdrain=0 vfinal= vstep= load infile=solve_tmp2 log outf= solve name=drain vdrain=0 vfinal= vstep= load infile=solve_tmp3 log outf= solve name=drain vdrain=0 vfinal= vstep= load infile=solve_tmp4 log outf= solve name=drain vdrain=0 vfinal= vstep= extract max current and saturation slope extract name=nidsmax max(i.drain) extract name=sat_slope slope(minslope(curve(v.drain,i.drain))) tonyplot overlay st nmos*.log quit 輸出特性曲線部分 go atlas mesh infile= set material models models cvt srh print contact name=gate interface qf=3e10 get initial solution solve init method newton trap solve prev Bias the drain a bit... solve vdrain= vstep= vfinal= name=drain solve vdrain= Ramp the gate to a volt... log outf= master solve vgate=0 vstep= vfinal= name=gate extract device parameters extract name=nvt(xintercept(maxslope(curve(abs(v.gate),abs(i.drain)))) abs(ave(v.drain))/) extract name=nbeta slope(maxslope(curve(abs(v.gate),abs(i.drain))))* ((ave(v.drain))) extract the device parameter SubVt... extract init inf= extract name=nsubvt (maxslope(curve(abs(v.gate),log10(abs(i.drain))))) tonyplot
試題試卷相關推薦
鄂ICP備17016276號-1