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【正文】 product ? Si + 4F ? SiF4 ? ? Pump away volatile product (SiF4 ?) 49 M a s kF ilm+ +I on ic s p e c ie s+ + ++Physical Etching ? Not very selective since all materials sputter at about the same rate. ? Physical sputtering can cause damage to surface, with extent and amount of damage a direct function of ion energy (not ion density). Ion Enhanced Etching ? The chemical and physical ponents of plasma etching do not always act independently both in terms of etch rate and in resulting etch profile. ? Figure shows etch rate of silicon as XeF2 gas (not plasma) and Ar+ ions are introduced to the silicon surface. Only when both are present does appreciable etching occur. ? Etch profiles can be very anisotopic, and selectivity can be good. No plasma sputtering SILICON VLSI TECHNOLOGY Fundamentals, Practice and Modeling By Plummer, Deal amp。 Griffin 169。 2022 by Prentice Hall Upper Saddle River N
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