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【正文】 TEM 10 11 12 Gas Flow Control ? Regulator ? Flow meter ? Mass flow controller 13 CVD 爐管內(nèi)的氣流 14 CVD化學(xué)反應(yīng) Disproportionation irreversible AsCl3(g) + 3Ga(s) ? 3GaCl(g) + 1/4 As4(g) 3GaCl(g) + 1/2 As4(g) ? 2GaAs(s) + GaCl3(g) Disadvantages: multizone furnace low gas flow low reaction efficiency (66%) system contamination (hot wall) 15 CVD化學(xué)反應(yīng) Pyrolysis irreversible Hydride reaction, SiH4(g) ? Si(s) + 2H2(g) Metalanic reaction MOCVD (CH3)3Ga(g) + AsH3(g) ? GaAs(s) + 3CH4(g) Advantages: low growth temperature cold wall reactor Disadvantage: chemical purity and cost 16 17 氣體 的 擴(kuò)散 及表面 反應(yīng) 18 19 20 LowPressure CVD System 21 PlasmaEnhanced CVD 22 以不同法成長 Si3N4之比較 23 PECVD、 LPCVD、 APCVD 之比較 24 25 26 27 The MOVD growth system 28 Vacuum and Exhaust system Gas handle system Computer Control Reactor MOCVD Growth System 29 Reactor1 30 Aixtron Model2400 reacto
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