[工程科技]半導(dǎo)體材料-在線瀏覽
2025-05-09 02:27本頁面
【正文】 ls to dry etch ? Si, SiO2, Si3N4, Al, W, Ti, TiN, TiSi2, Photoresist ? Difficult materials to dry etch ? Fe, Ni, Co, Cu, Al2O3, LiNbO3, etc. 42 RFpowered plasma etch system RFpowered plasma etch system 43 Barrel plasma system 44 45 46 47 Etchants and etch products S olid E tch gas E tch pro duc tSi , Si O2, Si3N4PSG , an d B PSGCF4, SF6, an d N F3Si F4Si Cl2 an d C C l2F2Si C l2 an d S iC l4Al BCl3, C C l4, C l2Al2Cl6 an d A lC l3O rg ani c solid sPh otor esi st s, e tc.O2O2 + C F4C O , C O2, H2OC O , C O2, HFRefr ac tory m et als(W, Ta , Ti, Mo, etc .)CF4WF6 … ..G aA s, I nP Cl2 an d C C l2F2G aC l3, A sCl5, … .48 Plasma assisted etching ? Plasma assisted etching sequence ? Take a molecular gas ? CF4 ? Establish a glow discharge ? CF4+e ? CF3 + F + e ? Radicals react with solid films to for
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