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【正文】 e better the planarity Slurry Particle ( ~ um) ? Silica (Colloidal) ? Alumina (Dispersed) Liquor (Contains some oxidant and anic reagents in the case of metal CMP) ? KOH ? NH4OH Wafer Cleaning Purpose: To remove the remainsand impuriti雜質(zhì) Methods: ? Brush Cleaning ? Spray Cleaning ? Ultrasonic 超聲波 Cleaning Photo resist SiO2 Si Substrate PhotoMask Positive積 極 Resist Negative負(fù)值 Resist Etching Intro 1 Next Page Positive Resist Negative Resist Etching Intro 2 Continue Etching Methods ? Wet Etching (Isotropic) Relatively simple process High throughput Low quality ? Dry Etching (Anisotropic) High quality (due to the excellent pattern transfer ability) Worse selectivity Wet Etching Substrate Thin Film Solution Boundary Layer Reagent Resultant Reaction Photo Resist (a) Isotropic Etching： A=0 (Erh=Erv) (b) Anisotropic Etching： A=1 (Erh=0) Isotropic amp。 負(fù)片－如果彼此成互補(bǔ)的關(guān)係稱負(fù)片 微影 制程 1 Wafer Wafer 暴光系統(tǒng)暴光 Wafer 光刻膠 涂光刻膠 氧化層 光源 Wafer 光刻膠 投影 Lens 光罩 聚光鏡 Next Page 光罩 光刻膠 氧化層 光源 接上一頁 Wafer Wafer Wafer 光刻膠顯影 刻蝕氧化層 去除光刻膠 顯示圖形 刻蝕出符合顯影的圖形 移除光刻膠
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