ic制造流程簡介-資料下載頁
2025-07-23 21:05本頁面
【正文】 igh quality (due to the excellent pattern transfer ability) Worse selectivity Wet Etching Substrate Thin Film Solution Boundary Layer Reagent Resultant Reaction Photo Resist (a) Isotropic Etching： A=0 (Erh=Erv) (b) Anisotropic Etching： A=1 (Erh=0) Isotropic amp。 Anisotropic Isotropic Quartz dome Silicon wafer Silicon carbide coated graphite RF Coil Gas in Gas exit Silicon carbide susceptor Gas exit Silicon wafers RF induction heating coil Dry Etching System 1 (a) Sputtering Etching (b) Plasma Etching (c) Reactive Ion Etching Ion Reactive Ion Volatile Product Volatile Product Reactive Ion RIE Scheme Diagram of RIE System Gas In To Vacuum Pump Plasma Electrode RF Annealing ? SiO2 ? Post Ion Implantation Annealing RTP RAPID THERMAL PROCESS 快速升溫過程 Furnace Reaction Room Gas in (H2) Wafer 3Zone Heating Element Gas out Gas in (O2) Loading Area Rapid Thermal Processing ? ΔT/s 100 176。 C/s ? Uniform Temperature Changing ? Low Thermal Budget (to pare with Furnace) ? To Avoid MOS Distortion HalogenW Heater (vertical) HalogenW Heater (horizontal) Wafer Gas out Gas in Typical RTP System Quartz Shelf The End Thank you!
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