【文章內(nèi)容簡(jiǎn)介】 ion 2. Module definition UMC Confidential, No Disclosure Data Prepared by Morris Page 22 DiffusionWell implantGateOxS/D implantILD / Contact / M1IMD1 / VIA1 / M2IMD2 / VIA2 / M3PassivationPADPOLYPhoto NWELLImplant NWellDIFF SACF OxidePhoto M1Etch M1T/F M1 Al SputterT/F IMD1 CVDProcess Flow Layer (Route) Module(Step) 3. Module integration EquipmentFacilityRecipe controlMetrology / InspectionEquipmentFacilityRecipe controlMetrology / InspectionUMC Confidential, No Disclosure Data Prepared by Morris Page 23 Fab flow 1. Lithography concept and cycle 4. Transistor Layer (Frontend) definition 5. Routing Layer (Backend) definition 3. Module position and integration 2. Module definition UMC Confidential, No Disclosure Data Prepared by Morris Page 24 Brief Process Flow First Layer (Diffusion) Psub (Silicon wafer) SiN (Nitrid) Pad oxide . Wafer Start . PAD Oxidation 110A (stress buffer) . SiN (Nitrid) Deposition . Diffusion Lithography : . coating Stepper Exposure Development Photo Resistor coating Diffusion mask Stepper Exposure Diffusion . Psub (Silicon wafer) SiN (Nitrid) Pad oxide UMC Confidential, No Disclosure Data Prepared by Morris Page 25 Diffusion . Psub (Silicon wafer) SiN (Nitrid) Pad oxide STI STI Brief Process Flow First Layer (Diffusion) cont’ . Trench (STI) Plasma Etching SiN Etching Silicon Etching . Photo Resistor remove UMC Confidential, No Disclosure Data Prepared by Morris Page 26 Brief Process Flow First Layer (Diffusion) cont’ . APCVD STI refill Liner Oxide Growth APCVD Oxide deposition STI Furnace 1000C Densify . STI CMP . SiN remove Diffusion . Psub (Silicon wafer) SiN (Nitrid) Pad oxide STI STI UMC Confidential, No Disclosure Data Prepared by Morris Page 27 NWELL Mask Brief Process Flow Well formation . Coating NWELL . Stepper Exposure NWELL Formation : NWELL PR coating NWELL Lithography Development NWELL implant PR stripping PWELL Formation : PWELL PR coating PWELL Lithography Development PWELL implant PR stripping Psub(Silicon) Sac. oxide STI PWELL NWELL P WELL Mask Stepper Exposure NWELL Implant 1. NWELL 1 2. NWELL 2 7. P MOS VT 8. P MOS antipunch P LL ImPPN MOS N MOS aUMC Confidential, No Disclosure Data Prepared by Morris Page 28 Brief Process Flow Gate Oxide and POLY PR coating Psub (Silicon) NWELL PWELL Gate Oxide TG Mask Stepper Exposure Gate Oxide 2 UPOLY growth3 Gate Oxide Formation : Thick Gate Oxide Growth PR coating TG Lithography Development RCAA Wet etching PR stripping Thin Gate Oxide Growth 4. Poly Growth undope. POLY growth N+POLY PR coating N+POLY Lithography Development N+POLY implant and PR Strip PR Coating N+POLY Mask N+POLY PR N+POLY implant Stepper Exposure UMC Confidential, No Disclosure Data Prepared by Morris Page 29 Brief Process Flow Gate Engineering Psub NWELL STI PWELL Poly PR coating Poly Mask NLDD NLDD NPKT NLDD NPKT PLDD PR PLDD PPKT Stepper Exposure NLDD Implant PLDD implant 5 Poly Gate Formation : Poly annealing PR coating POLY Lithography Development POLY Gate etching PR stripping Thin Oxide Growth 6. LDD (Light Dope Drain) implant NLDD Lithography (ellipsis) NLDD / NPKT implant PLDD Lithography (ellipsis) PLDD / PPKT implant UMC Confidential, No Disclosure Data Prepared by Morris Page 30 Brief Process Flow Drain Engineering Psub NWELL STI PWELL Poly PR coating Poly Mask NLDD NLDD NPKT NLDD NPKT PLDD PR PLDD PPKT N+ PR N+ N+ P+ PR P+ P+ Implant N+ implant Gate Oxide . Generic logic TiSalicide Process Poly TiSi2 Spacer Source Drain Channel Length 7 Poly Gate Formation : Poly annealing PR coating POLY Lithography Development POLY Gate etching PR stripping Thin Oxide Growth 8. LDD (Light Dope Drain) implant NLDD Lithography (ellipsis) NLDD / NPKT implant PLDD Lithography (ellipsis) PLDD / PPKT implant UMC Confidential, No Disclosure Data Prepared by Morris Page 31 Fab flow 1. Lithography concept and cycle 4. Transistor Layer (Frontend) definition 5. Routing Layer (Backend) definition 3. Module position and integration 2. Module definition UMC Confidential, No Disclosure Data Prepared by Morris Page 32 Brief Process Flow ILD Passivation Psub NWELL STI PWELL Poly PR coating Poly Mask NLDD NLDD NPKT NLDD NPKT PLDD PR PLDD PPKT N+ PR N+ N+ P+ PR P+ SAB PSG USG 9. Salicide Formation : PETEO