【正文】 ? has a sudden increase, and an abrupt transition from the uniform bending to buckling the ?gradual? mode corresponds to a gradual increase of the height at the bending ?point?, with a gradual transition from uniform bending to ?gradual? buckling results in a series of buckling intermediate formation.?Abrupt? buckling mode is mostly found for small diameter CNTs, while for large diameter CNTs, the ?gradual? mode is more the estimation of the wall numbers and thickness of CNTs, it was found that the CNTs with ?abrupt? buckling mode has smaller thickness diameter ratio than the CNTs with ?gradual? buckling critical buckling angle decreases with the increase of CNT diameter for the ?abrupt? buckling buckling behavior has also been investigated by molecular dynamics(MD) was found:(1)for all the CNTs studied, the SWNTs have “abrupt” buckling mode, and double and three walled CNTs take “gradual” buckling modes。(2)the “gradual” buckling corresponded to the process that different tube walls of MWNTs buckled at different bending stages, and the buckling degree of individual tube walls gradually increased along with the bending strain is caused by the unsynchronization of the buckling for different walls caused by the multishell character, and the retarding of buckling by the interwall vdW study on the formation of the two buckling modes found that the multishell structure of MWNTs accounts for the “gradual” buckling modes。(3)The MD studies also proved that the vdW interaction with substrate has no remarkable effect on CNTs buckling study on the buckling mechanism suggests that except for the diameter, the wall number also determines the buckling means for the mechanical properties of CNTs, a special “dualsize” effect may exists, that is, both the size and the thickness determine the CNTs mechanical using controlled AFM manipulation, the work here observed the structural evolution and buckling formation almost in the whole bending founding about the two buckling modes, not only provides support and reference for the relevant theoretical study, fills the gap between theory and experiment, but also is important for the application of CNTs in posite materials, nanoelectronics and NEMs, and strain resonance Raman spectroscopy of individual SWNTs under torsional and uniaxialstrain has been investigatedThe AFM manipulation can induce both torsional and uniaxial strains into the ultralong straight the longer propagation distance of uniaxial strain than the torsional strain, only pure uniaxial strain exists at region far from the manipulation at region close to the manipulation sites, both the two strains formation of torsional strain suggested the rolling of SWNT under the present AFM uniaxial and torsional strain can change the Raman vibrational was found that:(1)the RBM and Gband spectra responded differently to the two types of torsional strain, RBM frequency wRBM was found to upshift and one of the modes assigned to E2 symmetry in the G+ band, which occurs at ~1600 cm1(G+(E2(g))), downshifted significantly, whereas the rest Gmodes located in the range of 1590 cm1～1560 cm1 are slightly redshift of the(G+(E2(g)), ismuch larger that the buleshift of other G modes。(2)Under uniaxial strain, wRBM and wG+(E2(g))do not have noticeable response and the rest of the G modes in the range of 1590 cm1～1560 cm1 are downshifted.(3)Different Raman modes have different sensitivity to both and G+(E2(g))is more sensitive to torsion than other G under uniaxial strain, other G modes have larger sensitivity than RBM and G+(E2(g)).This is related to the correlation between the CC bond change and the atom vibrational displacement of different modes。(4)Thecalculation on the strain magnitude and frequency shift of Raman modes per strains dw/de found that, under torsional strain, dw(RBM)/det nearly linearly increased along with the increase of the tube chirality was found to split into multiple subbands in some cases, presumably due to broken symmetry induced by splitting is most likely found in zigzag and armchair the uniaxial and torsional strains can change the intensity of resonant Raman is originated from the influence of strains on electronic tranision energy this change, themodulation direction and magnitude of strains on the electronic transition energy of SWNTs can be influence of strain on the resonant Raman spectra of SWNTs has drawn much attention work here firstly experimentally studied the torsional strain effect on resonant Raman spectra of the study in the single SWNT scale by AFM manipulation can exclude the average effect originated from different diameter and helps to reveal the intrinsic property of parison of uniaxial and torsional strain for same SWNT, also benefit the understanding of the influence of different strains on analysis and modulation of strain distribution along SWNTs axis, and the parisonof related mechanical parameters of different SWNTsIt was found that after AFM manipulation, both the torsional and uniaxial strain would have a “L” shaped distribution along the SWNT axis, due to the friction between SWNTs and the substrate, and the partial relaxation of characteristics of the distribution, including the propagation distance of strain, the maximum strain and its position, and the slope of the strain distribution, are determined by the force exerted on SWNT by AFM tip, the elasticity modulus E and the shear modulus G, and the friction between SWNT and controlling the AFM manipulation and using patterned substrate with different ponents, the magnitude and distribution of strain in SWNT has been the parison of strain distribution in different SWNTs, their mechanical properties, such as E and G, and the friction with the substrate have been pared, on the single SWNTs was found that there is no monomial relationship between these parameters and the SWNTs diameter, this suggests that the chirality of SWNTs also has important effect on SW