【導(dǎo)讀】進(jìn)入21世紀(jì)以來，我國信息產(chǎn)業(yè)在生產(chǎn)和科研方面都大大加快了發(fā)展速度，并已成為國民經(jīng)濟(jì)發(fā)展的支柱產(chǎn)業(yè)之一。但是，與世界上其他信息產(chǎn)業(yè)發(fā)達(dá)的國。家相比，我過在技術(shù)開發(fā)、教育培訓(xùn)等方面都還存在這較大的差距。經(jīng)發(fā)展到了系統(tǒng)級(jí)芯片的階段。不斷進(jìn)步，CMOS技術(shù)已被證明是實(shí)現(xiàn)SOC的最好選擇。模擬電路是SOC中不。由于器件尺寸不不斷縮小和低電源電壓，低功耗等要求，模擬。CMOS集成電路設(shè)計(jì)在不斷的發(fā)展，在SOC中變得越來越重要。的紐帶，版圖的地位至關(guān)重要。在各類集成電路中，模擬集成電路由于對器件的。依賴性更強(qiáng)，所以起性能更大程度上受到版圖因素的影響。

　　

【正文】 ME SUBTYPES) IS ON OPTION TO SMASH SERIES CAPCITORS IS OFF OPTION TO SMASH PARALLEL DEVICES IS ON OPTION TO CONSTRUCT MOS PARALLEL/SERIES STRUCTURES IS ON OPTION TO SMASH PSEUDO PARALLEL DEVICES IS ON OPTION TO FORM CMOS GATES IS ON OPTION TO EXTRACT SUBSTRATE NODES OF GATES IS OFF OPTION TO FORM DRAMS IS OFF OPTION TO FORM SRAMS IS OFF POWER NODE IS NOT SPECIFIED GROUND NODE IS NOT SPECIFIED ******* STATISTICS AFTER REDUCE **** MOS BJT RES INV DIODE CAP SDWI PDWI SUPI 19 0 0 0 0 0 0 0 0 PUPI SDW PDW SUP PUP AND OR AOI NAND 附錄 31 0 0 0 0 0 0 0 0 0 NOR OAI UND BOX CELL LDD SMID PMID MOSCAP 0 0 0 0 0 0 1 0 0 DRAM SRAM 0 0 ******* REDUCE (SCHEMATIC) SUMMARY REPORT ******* ******* STATISTICS BEFORE REDUCE **** MOS BJT RES DIODE CAP UND BOX CELL LDD 21 0 0 0 0 0 0 0 0 POWER NODE IS NOT SPECIFIED GROUND NODE IS NOT SPECIFIED ******* STATISTICS AFTER REDUCE **** MOS BJT RES INV DIODE CAP SDWI PDWI SUPI 19 0 0 0 0 0 0 0 0 PUPI SDW PDW SUP PUP AND OR AOI NAND 0 0 0 0 0 0 0 0 0 NOR OAI UND BOX CELL LDD SMID PMID MOSCAP 0 0 0 0 0 0 1 0 0 DRAM SRAM 0 0 ***************** LVS REPORT ***************** DATE : 19MAY2021 TIME : 10:21:31 PRINTLINE = 1000 WPERCENT(MOS) = % LPERCENT(MOS) = % BJT EMITTER AREA CHECK: EMAPER= % 電子科技大學(xué)成都學(xué)院本科畢業(yè)設(shè)計(jì)論文 32 CAPACITOR VALUE CHECK: CVPER= % RESISTOR VALUE CHECK: RVPER= % */W* WARNING: NO POWER ON LAYOUT SIDE */W* WARNING: THEN THE POWER NODE MAY BE ASSIGNED DIFFERENT SCHEMATIC NAME. */W* WARNING: NO GROUND ON LAYOUT SIDE */W* WARNING: THEN THE GROUND NODE MAY BE ASSIGNED DIFFERENT SCHEMATIC NAME. */W* WARNING: NO POWER ON SCHEMATIC SIDE */W* WARNING: NO GROUND ON SCHEMATIC SIDE 1 *************************************************** ********* CORRESPONDENCE NODE PAIRS *********** *************************************************** SCHEMATICS LAYOUT PAD TYPE IN6 1 IN6 8 O L19 3 L19 12 I L21 7 L21 11 I L50 4 L50 15 I L55 2 L55 7 I OUTA 5 OUTA 10 I VSSA 6 VSSA 1 I ***TOTAL = 7*** NUMBER OF VALID CORRESPONDENCE NODE PAIRS = 7 1 *************************************************** ********** LVS DEVICE MATCH SUMMARY ********** *************************************************** NUMBER OF UNMATCHED SCHEMATICS DEVICES = 0 NUMBER OF UNMATCHED LAYOUT DEVICES = 0 NUMBER OF MATCHED SCHEMATICS DEVICES = 20 NUMBER OF MATCHED LAYOUT DEVICES = 20 1 *************************************************** ********** DISCREPANCY POINTS LISTING ********** 附錄 33 *************************************************** NO DISCREPANCIES *************************************************** ******** DEVICE MATCHING SUMMARY BY TYPE ******** *************************************************** TYPE SUBTYPE TOTAL DEVICE UNMATCHED DEVICE SCH. LAY. SCH. LAY. MOS LP 9 9 0 0 MOS LN 12 12 0 0 1 *************************************************** ********** LVS SUMMARY (REPEATED) ********** *************************************************** *************************************************** ********** LVS DEVICE MATCH SUMMARY ********** *************************************************** NUMBER OF UNMATCHED SCHEMATICS DEVICES = 0 NUMBER OF UNMATCHED LAYOUT DEVICES = 0 NUMBER OF MATCHED SCHEMATICS DEVICES = 20 NUMBER OF MATCHED LAYOUT DEVICES = 20 *************************************************** ******** DEVICE MATCHING SUMMARY BY TYPE ******** *************************************************** TYPE SUBTYPE TOTAL DEVICE UNMATCHED DEVICE SCH. LAY. SCH. LAY. MOS LP 9 9 0 0 MOS LN 12 12 0 0 *************************************************** **/L* SCHEMATIC AND LAYOUT MATCH ** *************************************************** 電子科技大學(xué)成都學(xué)院本科畢業(yè)設(shè)計(jì)論文 34 外文資料原文 DESIGN METHODOLOGY INSERT Page 33 Monday, September The increasing plexity of th