型半導(dǎo)體器ppt課件(編輯修改稿)
2025-05-31 22:05 本頁面
【文章內(nèi)容簡介】 a tubular form of carbon with diameter as small as 1 nm. Length: few nm to cm. CNT is configurationally equivalent to a two dimensional graphene sheet rolled into a tube. CNT exhibits: 1. Carrier mobility ~ 100,000 cm2/Vs 2. Young’s modulus over 1 Tera Pascal, as stiff as diamond。 3. Tensile strength ~ 200 GPa. CNT can be metallic or semiconducting, depending on chirality. 中國科學(xué)技術(shù)大學(xué)物理系微電子專業(yè) 2022/6/1 Theory of Semiconductor Devices 30 CNT FETs Gate 8nm HfO2 SiO2 p++ Si Pd Pd CNT Delft : Tans, et al., Nature, 393, 49, 1998 Javey, et al., Nano Letters, 4, 1319, 2022 Appenzeller, et al., PRL, 93, 19, 2022 Drain Source Gate Drain Source Gate Sapphire Substrate Gate Oxide Liu, et al., Nano Letters, 6, 34, 2022 中國科學(xué)技術(shù)大學(xué)物理系微電子專業(yè) 2022/6/1 Theory of Semiconductor Devices 31 Traditional approach: OnSite Synthesis of SingleWalled Carbon Nanotubes Si SiO2 PMMA Catalyst CH4 nanotube Catalyst island 900 186。C metal electrode H. Dai, et al, Nature 395, 878 (1998). 中國科學(xué)技術(shù)大學(xué)物理系微電子專業(yè) 2022/6/1 Theory of Semiconductor Devices 32 Infrastructure: Nanotube CVD Generation I 1 mm 1 mm nm in diameter nm in diameter Highquality nanotubes can be grown at specific positions 60 50 40 30 20 100IDS(nA) VDS(V )Vg: 4 V 0 V 2 V 6 V Nanotube transistor can be easily produced. Si back gate SiO2 S D 中國科學(xué)技術(shù)大學(xué)物理系微電子專業(yè) 2022/6/1 Theory of Semiconductor Devices 33 Toward Integrated Nanotube Systems Si back gate SiO2 K n type S D Potassium source 6005004003002001000IDS (nA)VDS (V )Vg: 6 V 4 V 2 V 0 V Potassium doping: 1. Heat up a potassium source。 2. Electron transfer from K to the nanotube reverts the doping from p type to n type. Ntype Field Effect Transistor 中國科學(xué)技術(shù)大學(xué)物理系微電子專業(yè) 2022/6/1 Theory of Semiconductor Devices 34 Integrated Nanotube Systems: Complementary Carbon Nanotube Inverter Carbon Nanotube FieldEffect Inverters, X. Liu, R. Lee, J. Han, C. Zhou, Appl. Phys. Lett. 79, 3329 (2022). One of the first integrated systems made of carbon nanotubes. Si back gate K Vin Vout VDD GND ptype CNT ntype CNT 6040200I DS(nA)4 2 0 2 4Vg(V )VDS= 10 mVP type MOSFET: 12840I DS (nA)4 2 0 2 4Vg (V )VDS= 10 mVN type MOSFET: Vout(V)Vin(V )VDD= VVin Vout 0 V VDD p n 中國科學(xué)技術(shù)大學(xué)物理系微電子專業(yè) 2022/6/1 Theory of Semiconductor Devices 35 167。 微波器件 ? 微波頻率覆蓋范圍從 1GHz（ 109Hz）到1000GHz，相應(yīng)的波長從 30cm到 。其中 30到 300GHz頻段，因其波長是 10到1mm，故稱為毫米波帶。更高的頻率稱為亞毫米波帶。 中國科學(xué)技術(shù)大學(xué)物理系微電子專業(yè) 2022/6/1 Theory of Semiconductor
教學(xué)課件相關(guān)推薦
鄂ICP備17016276號(hào)-1