微電子工藝課件16zhang(編輯修改稿)
2025-05-26 06:26 本頁(yè)面
【文章內(nèi)容簡(jiǎn)介】 + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + _ Hot filament emits electrons Gas inlet (Argon) To vacuum system Neutralizing filament Accelerating grid Screen grid Electromag improves ionization Plasma chamber (+anode repels +ions) Wafer can be tilted to control etch profile 低選擇比，低產(chǎn)能 . 刻金屬，不同的側(cè)壁 平行板 RIE反應(yīng)器 RF generator Wafer Powered electrode (cathode) Grounded electrode (anode) Ar+ (physical etch ponent) F (chemical etch ponent) Figure 高密度等離子體刻蝕機(jī) Photograph courtesy of Applied Materials, Metal Etch DPS Photo 電子回旋加速反應(yīng)器的原理圖 Microwave source MHz Wave guide Diffuser Quartz window Electrostatic chuck Cyclotron mag Plasma chamber Wafer Additional mag MHz Vacuum system Redrawn from Y. Lii, “Etching,” ULSI Technology, ed. by C. Chang amp。 S. Sze, (New York: McGrawHill, 1996), p. 349. 電感耦合等離子刻蝕機(jī) Electromag Dielectric window Inductive coil Biased wafer chuck RF generator Bias RF generator Plasma chamber 雙等離子源 (DPS) Decoupled plasma chamber Turbo pump Lower chamber Cathode Wafer Capacitivelycoupled RF generator (bias power) Inductivelycoupled RF generator (source power) Redrawn from Y. Ye et al, Proceedings of Plasma Processing XI, vol. 9612, ed. by G. Mathad and M. Meyyappan (Pennington, NJ: The Electrochemical Society, 1996), p. 222. 磁增強(qiáng)反應(yīng) 等離子刻蝕機(jī)(MERIE) Electromag (1 of 4) MHz Biased wafer chuck Wafer Redrawn from Wet/Dry Etch (College Station, TX: Texas Engineering Extension Service, 1996), p. 165. 干法刻蝕系統(tǒng)評(píng)價(jià) Endpoint detection Normal etch Change in etch rate detection occurs here. Endpoint signal stops the etch. Time Etch Parameter Figure 第十六章 刻蝕： 終點(diǎn)檢測(cè) 等離子刻蝕中被激發(fā)的基團(tuán)的特征波長(zhǎng) M a terial Etcha nt G a s E m it ting Sp ecies o f so m e Products Wa v eleng th (n m ) Sili con CF4/O2 Cl2 SiF SiCl 440。 777 287 SiO2 CHF3 CO 484 Alumin um Cl2 BCl3 Al AlCl 391。 394。 396 261 Photore sist O2 CO OH H 484
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