【文章內(nèi)容簡介】 S工藝流程模塊 Source/Drain Create Spacer SIMIT 34 SMIC 35 ? 微電子技術(shù)成就 ? MOSFET器件發(fā)展歷程 ? 典型 CMOS工藝流程模塊 ? 典型 CMOS制作工藝流程 ? MOSFET器件面臨的挑戰(zhàn) ? MOS器件結(jié)構(gòu)研究最新進展 ? FinFET器件研究進展 ? 可供選擇的新穎器件 典型 CMOS工藝流程 Isolation Psub (Silicon wafer) SiN (Nitride) Pad oxide ?Wafer Start ?PAD Oxidation (stress buffer) ?SiN (Nitride) Deposition ?Lithography : ?. coating ?Stepper Exposure ?Development Photo Resistor coating Diffusion mask Stepper Exposure Diffusion . Psub (Silicon wafer) SiN (Nitride) Pad oxide SIMIT 36 SMIC Diffusion . Psub (Silicon wafer) SiN (Nitride) Pad oxide STI STI 典型 CMOS工藝流程 – Isolation (cont) ?Trench (STI) Plasma Etching ?SiN Etching ?Silicon Etching ?Photo Resistor remove SIMIT 37 SMIC 典型 CMOS工藝流程 – Isolation (Cont) ?HDPCVD STI Refill ?Liner Oxide Growth ?HDPCVD Oxide Deposition ?STI Furnace Densification ?Sti Cmp ?Sin Remove Diffusion . Psub (Silicon wafer) SiN (Nitrid) Pad oxide STI STI SIMIT 38 SMIC NWELL Mask 典型 CMOS工藝流程 Well formation . Coating NWELL . Stepper Exposure ?NWELL Formation : ? NWELL PR Coating ? NWELL Lithography ? Development ? NWELL Implant ? PR Stripping ?PWELL Formation : ? PWELL PR Coating ? PWELL Lithography ? Development ? PWELL Implant ? PR Stripping Psub(Silicon) Sac. oxide STI PWELL NWELL P WELL Mask Stepper Exposure NWELL Implant 1. NWELL 1 2. NWELL 2 7. P MOS VT 8. P MOS antipunch PPPN MOS N MOS SIMIT 39 SMIC 典型 CMOS工藝流程 Gate Oxide and POLY PR coating Psub (Silicon) NWELL PWELL Gate Oxide TG Mask Stepper Exposure Gate Oxide 2 UPOLY growth? Gate Oxide Formation : ? Thick Gate Oxide Growth ? PR Coating ? TG Lithography ? Development ? RCAA Wet Etching ? PR Stripping ? Thin Gate Oxide Growth ? Poly Growth ? Undoped POLY Growth ? N+POLY PR Coating ? N+POLY Lithography ? Development ? N+POLY Implant And PR Strip PR Coating N+POLY Mask N+POLY PR N+POLY implant Stepper Exposure SIMIT 40 SMIC 典型 CMOS工藝流程 Gate Engineering Psub NWELL STI PWELL Poly PR coating Poly Mask NLDD NLDD NPKT NLDD NPKT PLDD PR PLDD PPKT Stepper Exposure NLDD Implant PLDD implant ?Poly Gate Formation : ? Poly Annealing ? PR Coating ? POLY Lithography ? Development ? POLY Gate Etching ? PR Stripping ? Thin Oxide Growth ?6. LDD (Light Dope Drain) Implant ? NLDD Lithography (Ellipsis) ? NLDD / NPKT Implant ? PLDD Lithography (Ellipsis) ? PLDD / PPKT Implant SIMIT 41 SMIC 典型 CMOS工藝流程 Drain Engineering Psub NWELL STI PWELL Poly PR coating Poly Mask NLDD NLDD NPKT NLDD NPKT PLDD PR PLDD PPKT N+ PR N+ N+ P+ PR P+ P+ Implant N+ implant ? Spacer Formation : ? PETEOS dep. ? SiN dep. ? Spacer dry etch ?Source and Drain Formation: ? N+ Lithography ? N+ implant ? PR stripping ? P+ Lithography ? P+ implant ? PR stripping SIMIT 42 SMIC 典型 CMOS工藝流程 ILD Passivation Psub NWELL STI PWELL Poly PR coating Poly Mask NLDD NLDD NPKT NLDD NPKT PLDD PR PLDD PPKT N+ PR N+ N+ P+ PR P+ SAB PSG USG ? Salicide Formation : ? SAB (Salicideblock) Oxide Dep. ? SAB Lithography (Ellipsis) ? Ti/Co Sputtering ? Salicidation RTP C49 Annealing ? TiN Residual Semitool Wet Clean ? Salicidation RTP C54 Annealing ?ILD Passivation ? SiN Deposition (Moisture And Sodium Block) ? APUSG Deposition (Gap Filling And B,P Trap) ? TEOSBPSG Deposition (Reflow And Planarization) ? ILD CMP SIMIT 43 SMIC Psub NWELL STI PWELL Poly PR coating Poly Mask NLDD NLDD NPKT NLDD NPKT PLDD PR PLDD PPKT N+ PR N+ N+ P+ PR P+ SAB PSG USG PR Coating 典型 CMOS工藝流程 Contact Plug Contact Mask PR coating Contact PR Metal 1 DUV Stepper Exposure ?Contact Plug Formation : ? Contact Lithography ? Contact Plasma Etching ? PR Strip ? Barrier Layer Deposition (Ti + TiN For Well Contact) ? RTP Annealing ? Glue Layer Deposition (Ti + TiN For Plug Adhesion) ? WCVD Filling ? WCMP ? Metal Liner Deposition (Ti + TiN For Metal Adhesion) ? Metal Sputter SIMIT 44 SMIC 典型 CMOS工藝流程 Backend (Aluminum) Psub NWELL STI PWELL Poly PR coating Poly Mask NLDD NLDD NPKT NLDD NPKT PLDD PR PLDD PPKT N+ PR N+ N+ P+ PR P+ SAB PSG USG PR Coating Contact Mask PR coating Contact PR Metal 1 Contact plug PR Coating Metal 1 mask Metal 1 PR Metal 1 HDP1 PEOX