南昌大學(xué)論文格式樣板-在線瀏覽
2024-07-30 22:31本頁面
【正文】 e grown by a homemade atmosphere pressure metalorganic chemical vapor deposition (MOCVD) and Thomas Swan 62” MOCVD systems. High bright blue LED wafers were obtained by optimizing the nitrides growth technology and wafer structure. Some encouraging results are following as:1. We present the idea of using a buffer layer of deviation from stoichiometry for materials growth on large lattice mismatch substrates. This idea was realized in nitrides growth in this thesis. The epilayer crystalline quality was improved and the dislocation density was decreased by using GaN low and high temperature buffer layers of deviation from stoichiometry. The RBS/channeling spectra exhibited that the minimum yield χmin of GaN layers was just only %. The leak electric current of GaN based LED was obviously decreased and lower than 1μA at 5 volt reverse voltage by using this new buffer technology.…………This work was supported by 863 program in China.Keyword: Nitrides；MOCVD；LED；Photoluminescence；RBS/channeling；Optical absorption. . . .宋體，小三號，居中目錄摘要 ⅠAbstract Ⅱ第一章 GaN基半導(dǎo)體材料及器件進(jìn)展（多數(shù)文章為“緒論”） 11 .1 III族氮化物材料及其器件的進(jìn)展與應(yīng)用 11. 2 III族氮化物的基本結(jié)構(gòu)和性質(zhì) 41. 3 摻雜和雜質(zhì)特性 121. 4 氮化物材料的制備 131. 5 氮化物器件 191. 6 GaN基材料與其它材料的比較 221. 7 本論文工作的內(nèi)容與安排 24第二章 氮化物MOCVD生長系統(tǒng)和生長工藝 31 2. 1 MOCVD材料生長機(jī)理 31 2. 2本論文氮化物生長所用的MOCVD設(shè)備 32…………目錄內(nèi)容：中文宋體，英文和數(shù)字Times New Roman，小四頁碼編號：摘要,Abstract使用頁碼“I,II,…”；正文開始使用頁碼“1,2,3,…”；小節(jié)標(biāo)題左側(cè)縮進(jìn)1字符；頁碼數(shù)字居中對齊 結(jié)論 136參考文獻(xiàn)（References） 138致謝 150. . .
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