半導(dǎo)體生產(chǎn)過程培訓(xùn)課件(參考版)
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【正文】 上午 04:48:26二月 21MOMODA POWERPOINTLorem ipsum dolor sit amet, consectetur adipiscing elit. Fusce id urna blandit, eleifend nulla ac, fringilla purus. Nulla iaculis tempor felis ut cursus. 感謝您的下載觀看專 家告 訴。 4:48:26February 2023/2/101,214:48上午 04:48:26二月 21w 1最具挑 戰(zhàn) 性的挑 戰(zhàn) 莫 過 于提升自我。二月 2023w 1意志 堅(jiān) 強(qiáng) 的人能把世界放在手中像泥 塊 一 樣 任意揉捏。 二月 21二月 2104:48:2604:48:26February2023w 1知人者智，自知者明。February 二月 2104:48:2604:48Feb2101Feb21w 1越是無能的人，越喜 歡 挑剔 別 人的 錯(cuò) 兒。4:48:262023w 閱讀 一切好 書 如同和 過 去最杰出的人 談話 。February上午 04:48:26二月 21w 楊 柳散和 風(fēng) ，青山澹吾 慮 。 4:48:26February 2023/2/101,214:48 。20234:48:26 0101,2023w 1不知香 積 寺，數(shù)里入云峰。February 二月 2104:48:2604:48Feb2101Feb21w 1世 間 成事，不求其 絕對(duì)圓滿 ，留一份不足，可得無限完美。4:48:252023w 很多事情努力了未必有 結(jié) 果，但是不努力卻什么改 變 也沒有。February上午 04:48:25二月 21w 沒有失 敗 ，只有 暫時(shí) 停止成功！。 4:48:25February 2023/2/101,214:48 。20234:48:25 0101,2023w 1乍 見 翻疑夢(mèng)，相悲各 問 年。February 二月 2104:48:2504:48Feb2101Feb21w 1故人江海 別 ，幾度隔山川。4:48:252023w 雨中黃葉 樹 ，燈下白 頭 人。FebruaryHall Bibliographyw 靜夜四無 鄰 ，荒居舊 業(yè)貧 。HallSemiconductor Devices by Mauro Zambuto 1989 McGraw173。Ion ImplantationComparison of Diffusion and Ion Implantationw Diffusion is a cheaper and more simplistic method, but can only be performed from the surface of the wafers. Dopants also diffuse unevenly, and interact with each other altering the diffusion rate.w Ion implantation is more expensive and plex. It does not require high temperatures and also allows for greater control of dopant concentration and profile. It is an anisotropic process and therefore does not spread the dopant implant as much as diffusion. This aids in the manufacture of self173。1250 ) to drive the doping atoms into the silicon. w Ion Implantationn A particle accelerator is used to accelerate a doping atom so that it can perate a silicon crystal to a depth of several micronsn Lattice damage to the crystal is then repaired by heating the wafer at a moderate temperature for a few minutes. This process is called annealing.method)w Process:n Opposite polarity doping atoms are added to molten silicon during the Czochralski process to create in173。Fabricationetching.allowmechanisms chemicalenhanceThesesurface.towardchargeaccelerateswaferonnegativeupplacementpoweredonwafersprocessesIniondue CH3COOH+HNO3+H3PO4 What is a plasma (glow discharge)?w A plasma is a partially ionized gas made up of equal parts positively and negatively charged particles. w Plasmas are generated by flowing gases through an electric or magic field. w These fields remove electrons from some of the gas molecules. The liberated electrons are accelerated, or energized, by the fields. w The energetic electrons slam into other gas molecules, liberating more electrons, which are accelerated and liberate more electrons from gas molecules, thus sustaining the plasma.Dry or Plasma EtchingDry or Plasma EtchingDry or Plasma EtchingCombination of chemical and physical etching – Reactive Ion Etching (RIE) Directional45 176。 HNO3 + HF + CH3COOH + H2O w Aluminum 173。 need to use oxide hard mask w Silicon 173。 Hot phosphoric a
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