半導體生產(chǎn)過程培訓課件(完整版)
【正文】 ost monly used. Reduction reticles are used on a variety of steppers, the most mon being ASM, Canon, Nikon, and GCA.PhotolithographyPhotomasks and ReticlesExamples of 5X Reticles:PhotolithographyPhotomasks and Reticles Once the mask has been accurately aligned with the pattern on the wafer39。knownsideontodevelopedlightwithglassbeprocessonusedCrystal MaterialCRYSTAL GROWTHw Czochralski Process is a Technique in Making Single173。SemiconductorElectronicsCrystal Siliconw A Solid Seed Crystal is Rotated and Slowly Extracted from a Pool of Molten Siw Requires Careful Control to Give Crystals Desired Purity and DimensionsCYLINDER OF MONOCRYSTALLINEw The Silicon Cylinder is Known as an Ingotw Typical Ingot is About 1 or 2 Meters in Lengthw Can be Sliced into Hundreds of Smaller Circular Pieces Called Wafersw Each Wafer Yields Hundreds or Thousands of Integrated CircuitsWAFER MANUFACTURINGw The Silicon Crystal is Sliced by Using a DiamondTipped Saw into Thin Wafersw Sorted by Thicknessw Damaged Wafers Removed During Lappingw Etch Wafers in Chemical to Remove any Remaining Crystal Damagew Polishing Smoothes Uneven Surface Left by Sawing ProcessTHE CRYSTAL STRUCTURE OF SILICONw A Unit Cell Has 18 Silicons Atomsw Weak Bonding Along Cleavage Planesw Wafer Splits into 4 or 6 Wedge173。toaistypicallyplate.acalledwhichthethebyass surface, the photoresist is exposed through the pattern on the mask with a high intensity ultraviolet light. There are three primary exposure methods: contact, proximity, and projection. PhotolithographyPatterningThecalledsprayeddissolvesmethodsincrustplasmawithandDespiterepeatto Thick (173。methodheatinggrowsuniform.properhasthustransistors.wWet oxide 173。buttheproducedegradeoxidelayerasmustoxidesgaseousoxidesnumbersusestillmultipleVariablesisarewetwithproductstomask,areistopattern can etch just about anythingExample Wet Processesw For SiO2 etching 173。45 176。Inpowerednegativechargeenhanceetching.Ion ImplantationComparison of Diffusion and Ion Implantationw Diffusion is a cheaper and more simplistic method, but can only be performed from the surface of the wafers. Dopants also diffuse unevenly, and interact with each other altering the diffusion rate.w Ion implantation is more expensive and plex. It does not require high temperatures and also allows for greater control of dopant concentration and profile. It is an anisotropic process and therefore does not spread the dopant implant as much as diffusion. This aids in the manufacture of self173。2023w 雨中黃葉 樹 ，燈下白 頭 人。2023w 1乍 見 翻疑夢，相悲各 問 年。 。February2023w 很多事情努力了未必有 結(jié) 果，但是不努力卻什么改 變 也沒有。2023w 1不知香 積 寺，數(shù)里入云峰。 。February2023w 閱讀 一切好 書 如同和 過 去最杰出的人 談話 。2023w 1知人者智，自知者明。上午 04:48:26二月 21w 1最具挑 戰(zhàn) 性的挑 戰(zhàn) 莫 過 于提升自我。February 4:48:26214:48 二月 21二月 2104:48:2604:48:26February4:48:26 4:48:26214:4801,4:48:25 4:48:25214:4801,4:48:25HallSemiconductor Devices by Mauro Zambuto 1989 McGraw173。Fabrication chemicaltowardonprocesses CH3COOH+HNO3+H3PO4 What is a plasma (glow discharge)?w A pla
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