微機電系統(tǒng)ppt課件(參考版)
2025-05-06 23:16本頁面
【正文】 (100) 100 Note: the advantage of wet etching is that you will get good selectivity, but hard to control etch rate. 5) Dry etching a. Plasma etch polySi :Cl, F based gases, such as Cl2, CF4 Oxides: CHF3, C2F6 etc. b. RIE( reactive iron etch ) c. DRIE （三） Surface vs. Bulk micromaching Surface micromaching Bulk micromaching Surface Micromachining Bulk Micromachining Trench Bridge Cantilevers Wafer Surface Cavity Nozzle Membrane （四） LIGA (Lithographic, Galvanoformung, Abformung) (Deep xray lithography, electroplating, molding) 1) Development and Electroplating 2) Molding 3) LIGA vs. Si microlithography （五） CMOS process 。 C~700176。 C~900176。 when t d≈ B t/A A and B can be obtained from ?handbook‘ 14121 ??? tABAdBA422) Deposition (no chemical reaction on surface) Vacuum chambers are needed + thin film deposition Al, Au, Cr 3) Sputtering A momentumexchange process (not heating) Low temperature process We can sputter anything onto substrate theoretically 4)CVD (Chemical Vapor Deposition) (1) ( 300~500176。 C ) 2SiO22 S iOOSi ??222 2HS iOgOH2Si ??? ）（ Si d Where t: time。 C, 4hr) Wet oxidation: ( 800176。m ? Reduction in diffraction, reflection, and scattering effects ? Not affected by anic defects in mask Cons – Shadow printing – Lateral magnification error – Brighte
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