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【正文】 pitaxy for highcurrent pin solar cell applications 2005(9)[7].KURTZ S J A A Minority carrier diffusion and defects in InGaAsN grown by molecular beam epitaxy 2002(8)[8].GEISZ J M W Highefficiency GaInP/GaAs/InGaAs triplejunction solar cells grown inverted with a metamorphic bottom junction 2007(2)[9].KONDOW S GaInNAs:a novel material for longwavelength semiconductor laser 1997(3)[10].KURTZ S J M Projected performance of threeand fourjunction devices using GaAs and GaInP 1997[11]. E D InGaAsN solar cells with eV band gap,lattice matched to GaAs 1999(5)[12].KURTZ S C RM Minority carrier diffusion,defects,and localization in InGaAsN,with 2% nitrogen 2000(3)[13].YAMAGUCHI T Novel materials for highefficiency ⅢV multijunction solar cells 2008(2)。[14].Barth S, B228。ssler H. Intrinsic photoconduction in PPVtype conjugated polymers. Phys Rev Lett, 1997, 79: 4445—4448[DOI] [15].Marks R N, Halls J J M, Bradley D D C, Friend R H, Holmes A B. The photovoltaic response in poly(pphenylene vinylene) thinfilm devices. J Phys Condens Matter, 1994, 6: 1379—1394[DOI] 7 / 7
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