【文章內(nèi)容簡介】 CH Figure } 100 200 300 400 500 Oxidation time (minutes) 4,000 197。 2,000 197。 3,000 197。 1,000 197。 Oxidation thickness Approximate linear region 169。 2023 by Prentice Hall Semiconductor Manufacturing Technology by Michael Quirk and Julian Serda LOCOS Process 3. Local oxidation of silicon Cross section of LOCOS field oxide (Actual growth of oxide is omnidirectional) 1. Nitride deposition Pad oxide (initial oxide) 2. Nitride mask etch Silicon Nitride SiO2 growth 4. Nitride strip SiO2 SiO2 Nitride Silicon Figure 169。 2023 by Prentice Hall Semiconductor Manufacturing Technology by Michael Quirk and Julian Serda Selective Oxidation and Bird’s Beak Effect Silicon oxynitride Nitride oxidation mask Bird’s beak region Selective oxidation Pad oxide Silicon substrate Silicon dioxide Used with permission from International SEMATECH Figure 169。 2023 by Prentice Hall Semiconductor Manufacturing Technology by Michael Quirk and Julian Serda STI Oxide Liner Cross section of shallow trench isolation (STI) Silicon Trench filled with deposited oxide Sidewall liner 1. Nitride deposition Pad oxide (initial oxide) 2. Trench mask and etch Silicon Nitride 4. Oxide planarization (CMP) 5. Nitride strip Oxide 3. Sidewall oxidation and trench fill Oxide over nitride Figure 169。 2023 by Prentice Hall Semiconductor Manufacturing Technology by Michael Quirk and Julian Serda Furnace Equipment ? Horizontal Furnace ? Vertical Furnace ? Rapid Thermal Processor (RTP) 169。 2023 by Prentice Hall Semiconductor Manufacturing Technology by Michael Quirk and Julian Serda Horizontal and Vertical Furnaces Table P e r f o r m anc eF ac t o rP e r f o r m anc eOb j e c t iveHor i z ont al F u r n ac e Ve r t ica l F u r n ac eT y pi c a l w a fe rl o a di n g s i z eS m a l l , f o r p r o c e s sf l e xi b i l i t y200 w a f e r s / b a t c h 100 w a f e r s / b a t c hCl e a n r o o mfoo t pri n tS m a l l , t o us e l e s ss pa c eL a r ge r, b ut h a s 4 p r o c e s st ub e sS m a l l e r (s i ngl e p r o c e s st ub e )P a ra l l e l p r o c e s s i n gIde a l f o r p r o c e s sf l e xi b i l i t yN o t c a pa b l e Ca pa b l e o fl o a di n g/ u n l o a d i n g w a f e r sduri n g p r o c e s s , w h i c hi n c r e a s e s t hr o ug h p utG a s f l owd y n a m i c s (G F D )O pt i m i z e f o runi f o r m i t yW o r s e due t o pa dd l e a n dbo a t ha r dw a r e . B o u y a n c ya n d g r a v i t y e ffe c t s c a us en o n u n i f o r m ra di a l ga sdi s t r i b ut i o n .S upe r i o r G F D a n ds y m m e t ri c / u n i f o r m g a sdi s t r i b ut i o nBo a t r o t a t i o n f o ri m p r o v e d f i l muni f o r m i t yIde a l c o n d i t i o n Im po s s i b l e t o de s i gn E a s y t o i n c l u deT e m pe ra t u r egra di e nt a c r o s sw a fe rIde a l l y s m a l l L a r ge , due t o r a d i a nts h a do w o f pa ddl eS m a l lP a rt i c l e c o nt r o lduri n gl o a di n g/ u n l o a d i n gM i n i m um p a r t i c l e s R e l a t i v e l y poo r Im p r o v e d pa rt i c l e c o nt r o lf r o m t o pdo w n l o a di ngs c h e m eQ ua r t z c h a ngeE a s i l y do n e i n s h o rttimeM o r e i n v o l ve d a n d s l o w E a s i e r a n d qu i c ke r, l e a di ngt o r e duc e d do w n t i m eW a f e r l o a di ngt e c hn i q ueIde a l l y a ut o m a t e d D i f f i c ul t t o a ut o m a t e i n as uc c e s s f ul f a s h i o nE a s i l y a ut o m a t e d w i t hr o b o t i c sP r e a n d po s t pr o c e s s c o n t r o l o ff urn a c e a m b i e ntCo n t r o l i s de s i ra b l e R e l a t i v e l y di ff i c ul t t oc o n t r o lE xc e l l e nt c o nt r o l , w i t ho pt i o n s o f e i t h e r v a c uum o rn e ut ra l a m b i e nt169。 2023 by Prentice Hall Semiconductor Manufacturing Technology by Michael Quirk and Julian Serda Horizontal Diffusion Furnace Photograph courtesy of International SEMATECH Photo 169。 2023 by Prentice Hall Semiconductor Manufacturing Technology by Michael Quirk and Julian Serda Vertical Diffusion Furnace Photograph courtesy of International SEMATECH Photo 169。 2023 by Prentice Hall Semiconduct