現(xiàn)代cmos工藝基本流程課件(ppt 79頁)(文件)
【正文】 Nitride Tungsten 鎢淀積 ? 鎢淀積 – CVD –厚度不少于接觸孔直徑的一半 –填充接觸孔 56 Silicon Substrate P+ Silicon Epi Layer P P Well N Well N+ Drain N+ Source P+ Drain P+ Source BPSG W Contact Plug 鎢拋光 ? 鎢拋光 – CMP –除去表面的鎢和 TiN –留下鎢塞填充接觸孔 57 Trench Oxide Polysilicon Cross Section N Well P Well N+ Source/Drain P+ Source/Drain Spacer Contact 平面視圖 接觸孔 ? 完成接觸孔，多晶硅上的接觸孔沒有出現(xiàn)在剖面圖上 58 Silicon Substrate P+ Silicon Epi Layer P P Well N Well N+ Drain N+ Source P+ Drain P+ Source BPSG W Contact Plug Metal1 Ti (200197。) antireflective coating Metal1淀積 ? 第一層金屬淀積 (Metal1) –實際上由多個不同的層組成 –濺射工藝 59 Silicon Substrate P+ Silicon Epi Layer P P Well N Well N+ Drain N+ Source P+ Drain P+ Source BPSG W Contact Plug Metal1 Photoresist 光刻膠成形 ? 光刻膠成形 –用于定義 Metal1互連 60 Silicon Substrate P+ Silicon Epi Layer P P Well N Well N+ Drain N+ Source P+ Drain P+ Source BPSG W Contact Plug Metal1 Photoresist Metal1刻蝕 ? Metal1刻蝕 –基于氯的 RIE –由于 Metal1由多層金屬組成，所以需要多個刻蝕步驟 61 Silicon Substrate P+ Silicon Epi Layer P P Well N Well N+ Drain N+ Source P+ Drain P+ Source BPSG W Contact Plug Metal1 除去光刻膠 62 Trench Oxide Polysilicon Cross Section N Well P Well N+ Source/Drain P+ Source/Drain Spacer Contact Metal1 平面視圖 第一層互連 ? 完成第一層互連 63 Silicon Substrate P+ Silicon Epi Layer P P Well N Well N+ Drain N+ Source P+ Drain P+ Source BPSG W Contact Plug Metal1 IMD1 IMD淀積 ? 金屬間絕緣體 (IMD)淀積 –未摻雜的 SiO2 –連續(xù)的 CVD和刻蝕工藝，厚度約 1um –填充在金屬線之間，提供金屬層之間的絕緣隔離 64 Silicon Substrate P+ Silicon Epi Layer P P Well N Well N+ Drain N+ Source P+ Drain P+ Source BPSG W Contact Plug Metal1 IMD1 IMD拋光 ? IMD拋光 – CMP 65 Silicon Substrate P+ Silicon Epi Layer P P Well N Well N+ Drain N+ Source P+ Drain P+ Source BPSG W Contact Plug Metal1 IMD1 Photoresist 光刻膠成形 ? 光刻膠成形 –用于定義通孔 (Vias) 66 Silicon Substrate P+ Silicon Epi Layer P P Well N Well N+ Drain N+ Source P+ Drain P+ Source BPSG W Contact Plug Metal1 Photoresist IMD1 通孔刻蝕 ? 通孔刻蝕 –基于氟的 RIE，獲得垂直的側(cè)墻 –提供金屬層之間的連接 67 Silicon Substrate P+ Silicon Epi Layer P P Well N Well N+ Drain N+ Source P+ Drain P+ Source BPSG W Contact Plug Metal1 IMD1 除去光刻膠 68 Tungsten Silicon Substrate P+ Silicon Epi Layer P P Well N Well N+ Drain N+ Source P+ Drain P+ Source BPSG W Contact Plug Metal1 IMD1 W Via Plug TiN和鎢淀積 ? TiN和鎢淀積 –同第一層互連 69 Silicon Substrate P+ Silicon Epi Layer P P Well N Well N+ Drain N+ Source P+ Drain P+ Source BPSG W Contact Plug Metal1 IMD1 W Via Plug 鎢和 TiN拋
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