微機(jī)電系統(tǒng)ppt課件-wenkub
2023-05-18 23:16:47 本頁面
【正文】 rocess ? High aspect ratio ? Solves depth of focus problem ? High resolutions of ~ .5 181。m ? Reduction in diffraction, reflection, and scattering effects ? Not affected by anic defects in mask Cons – Shadow printing – Lateral magnification error – Brighter xray sources needed – More sensitive resists needed – Difficult fabrication of xray mask 4. Electron Beam Lithography As scanning electron microscopes, an electron beam scans across the substrate surface and exposes electron sensitive coating. Pros ? Computercontrolled beam ? No mask is needed ? Can produce sub1 181。 C ) 2SiO22 S iOOSi ??222 2HS iOgOH2Si ??? ）（ Si d Where t: time。 C~900176。 (100) 100 Note: the advantage of wet etching is that you will get good selectivity, but hard to control etch rate. 5) Dry etching a. Plasma etch polySi :Cl, F based gases, such as Cl2, CF4 Oxides: CHF3, C2F6 etc. b. RIE( reactive iron etch ) c. DRIE （三） Surface vs. Bulk micromaching Surface micromaching Bulk micromaching Surface Micromachining Bulk Micromachining Trench Bridge Cantilevers Wafer Surface Cavity Nozzle Membrane （四） LIGA (Lithographic, Galvanoformung, Abformung) (Deep xray lithography, electroplating, molding) 1) Development and Electroplating 2) Molding 3) LIGA vs. Si microlithography （五） CMOS process 。 C~700176。 when t d≈ B t/A A and B can be obtained from ?handbook‘ 14121
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