【正文】 第一篇：機(jī)械工程英語(yǔ)課文翻譯914第九章 Lapping 研磨Lapping is a finishing operation used on flat and cylindrical lap, shown in , is usually made of cast iron, copper, leather, or 。研具，通常用鑄鐵、銅、皮革或布制成。The abrasive particles are embedded in the lap, or they may be carried through on the hardness of the workpiece, lapping pressures range from 7kPa to 140kPa(1 to 20 psi).研磨微粒嵌入研具內(nèi)，或者可以通過(guò)液體攜帶。根據(jù)工件硬度，研磨壓力可在7kPa到140kPa(1到20psi)范圍中取。Lapping has two main , it produces a superior surface finish with all machining marks being removed from the , it is used as a method of obtaining very close fits between mating parts such as pistons and 。首先，它通過(guò)去除所有機(jī)加工痕跡能產(chǎn)生較好的表面光潔度。其次，它能用作獲得像活塞與氣缸之類(lèi)配件間過(guò)盈配合的方法。The lapped workpiece surface may look smooth but it is actually filled with microscopic peaks, valleys, scratches and surfaces are perfectly minimizes the surface irregularities, thereby increasing the available contact ，其實(shí)布滿(mǎn)著微觀(guān)峰、谷、劃痕和凹陷。幾乎沒(méi)有表面是完全平整的。研磨使表面不規(guī)則最小化，因而增加了有效接觸面積。The drawing in shows two upper one is how a surface might look before lapping and the lower one after removes the microscopic mountain tops and produces relatively flat microscopic mountain ranges may need to be ground down in order to increase the available contact 。上面是研磨前表面可能的外觀(guān)模樣而下面則是研磨后的模樣。研磨去除了微觀(guān)峰頂從而產(chǎn)生相對(duì)平坦的平臺(tái)。整個(gè)微觀(guān)山脈范圍都需要磨去以增加有效接觸面積。Production lapping on flat or cylindrical pieces is done on machines such as those shown in and is also done on curved surfaces, such as spherical objects and lenses, using specially shaped 。研磨也可采用特殊成型研具在諸如球形物體和透鏡之類(lèi)的曲面上進(jìn)行。Polishing拋光Polishing is a process that produces a smooth, lustrous surface basic mechanisms are involved in the polishing process:(a)finescale abrasive removal, and(b)softening and smearing of surface layers by frictional heating during 、有光澤表面光潔度的工藝。拋光工藝涉及兩種基本機(jī)理：(a)精細(xì)等級(jí)磨粒去除，和(b)在拋光中通過(guò)摩擦生熱軟化并抹光表面層。ElectropolishingElectropolishing is an electrochemical process similar to, but the reverse of, electropolishing process smoothes and streamlines the microscopic surface of a metal finishes can be obtained on metal surfaces by 電解拋光是一種與電鍍相似的電化學(xué)工藝，但過(guò)程與電鍍正好相反。電解拋光工藝使金屬物體的微觀(guān)表面平滑和簡(jiǎn)單化。通過(guò)電解拋光能在金屬表面得到鏡面光潔度。In electropolishing, the metal is removed ion by ion from the surface of the metal object being and the fundamental principles of electrolysis(Faraday’s Law)replace traditional mechanical finishing ，金屬是逐個(gè)離子地從被拋光金屬物體表面去除的。電化學(xué)和電解基本原理(Faraday定理)取代了傳統(tǒng)的機(jī)械精加工技術(shù)。In basic terms, the object to be electropolished is immersed in an electrolyte and subjected to a direct electrical object is maintained anodic, with the cathodic connection being made to a nearby metal ，要電解拋光的物體被浸沒(méi)在電解液中并且通上直流電。該物體為陽(yáng)極，陰極連接到附近的金屬導(dǎo)體上。Smoothness of the metal surface is one of the primary and most advantageous effects of the process, a film of varying thickness covers the surface of the film is thickest over micro depressions and thinnest over micro 。在此過(guò)程中，一變化著厚度的膜覆蓋在金屬表面上。該膜在微觀(guān)凹陷處最厚而在微觀(guān)凸出處最薄。Electrical resistance is at a minimum wherever the film is thinnest, resulting in the greatest rate of metallic selectively removes microscopic high points or “peaks” faster than the rate of attack on the corresponding microdepressions or “valleys”.電阻在膜最薄處最小，導(dǎo)致最大金屬分解率。電解拋光選擇性地去除微觀(guān)高點(diǎn)或“峰” 快于對(duì)相應(yīng)微觀(guān)凹陷處或“谷”的侵蝕速率。Stock is removed as metallic removal under certain circumstances is controllable and can be held to to 。 。Chemical Mechanical PolishingChemical mechanical polishing is being an increasingly important step in the fabrication of multilevel integrated mechanical polishing refers to polishing by abundant slurry that interacts both chemically and mechanically with the surface being 化學(xué)機(jī)械拋光正在多層集成電路制造領(lǐng)域成為日益重要的步驟。化學(xué)機(jī)械拋光是指大量拋光液與被拋光表面產(chǎn)生化學(xué)和機(jī)械作用的拋光。During the chemical mechanical polishing process, a rotating wafer is pressed face down onto a rotating, resilient polishing pad while polishing slurry containing abrasive particles and chemical reagents flows in between the wafer and the ，旋轉(zhuǎn)晶片面向下壓在旋轉(zhuǎn)、有回彈力的拋光襯墊上，而同時(shí)含有研磨微粒和化學(xué)反應(yīng)物的拋光液流過(guò)晶片與襯墊之間。The bined action of polishing pad, abrasive particles and chemical reagents results in material removal and polishing of the wafer mechanical polishing creates flat, damagefree on a variety of brittle materials and it is used extensively on silicon wafers in the manufacture of integrated 、研磨微粒和化學(xué)反應(yīng)物的共同作用導(dǎo)致晶片表面的材料去除并拋光?；瘜W(xué)機(jī)械拋光可使多種易碎材料平整且不受損害，因此在集成電路制造中被廣泛地用在硅晶片上。Chemical mechanical polishing is a plicated multiphase mainly includes the following two , the active ponent in polishing slurry reacts with the atoms of the wafer, and the process is chemical reaction step with oxidationreductive 。它主要包括下列兩個(gè)動(dòng)態(tài)過(guò)程：第一，拋光液中活性成分與晶片的原子發(fā)生反應(yīng)，這是帶有氧化還原反應(yīng)的化學(xué)反應(yīng)步驟。The second step is the process of desorption, that is to say, the resultants gradually separate from the wafer surface and new surface is exposed to polishing chemical reactive rate is smaller, the total removal rate of the wafer is also small。furthermore, the surface degree of finish is not ，即反應(yīng)產(chǎn)物逐漸從晶片表面分離并將新表面暴露給拋光液。如果化學(xué)反應(yīng)速率較小，晶片的總?cè)コ室草^小，而且表面光潔程度不夠好。On the contrary, even if chemical reaction is very rapid, but desorption is very slow, the total removal rate is not resultants connot separate from the wafer surface, the active ponent in the polishing slurry cannot expose and react with the atoms on the new surface, which holds up chemical ，即使化學(xué)反應(yīng)很快，但解吸附很慢，則總?cè)コ室膊粔蚝谩Ｒ驗(yàn)榉磻?yīng)產(chǎn)物不能從晶片表面分離，拋光液中活性成分就不能暴露并與新表面上的原子起反應(yīng)，這會(huì)抑制化學(xué)反應(yīng)。The balance and positive effects of two steps decide the total removal rate and its surface degree of 。第十章 Surface Engineering 表面處理The processes of surface engineering, or surface treatments, tailor the surfaces of engineering materials to:(1)control friction and wear,(2)improve corrosion resistance,(3)change physical property, ., conductivity, resistivity, and reflection,(4)alter dimension,(5)vary appearance, ., color and roughness,(6)reduce ：(1)控制摩擦和磨損，(2)改善抗腐蝕性，(3)改變物理性能，例如，傳導(dǎo)率、電阻系數(shù)和反射率，(4)修改尺寸，(5)變更外觀(guān)，例如顏色和粗糙程度，(6)降低成本。Common surface treatments can be divided into two major categories: treatments that cover the surfaces