光刻工作總結(jié)報告-在線瀏覽
2025-02-20 05:05本頁面
【正文】 IBE Y SCRIBE COLS 12 ROWS 9 MODIFY RETICLE KEY DEFINITIONS C CHANGE SINGLE CHIP A CHANGE ALL CHIP K ADD KEYS,LEFT ,RIGHT,BOTH,NONE O ENTER A CHIP OFFSET D DELETE CHIP E ENLARGE VIEW R ROTATE CHIP 90 DEGREE RETMAN PROGRAM KEY HAMS SCAN/ALIGN 1 PE INTERMIX Y WAFER RADIUS KEY TO BSLN RETICLE 3 LOCAL PREALIGN N AUTOSTACK? N TITLE HEIGHT MIN. DICE/STEP 1 X Y SCAN KEY POSIONS PRMARY OAT SECOND OAT STEPPING DISTANCE STEP ARRAY OFFSET STACKING DISTANCE 0 0 RETMAN PROGRAM 光刻工藝控制 四 . 工藝問題處理 a. MissAlignment: b, Field array c,顯影后問題 光刻工藝控制 ? MisAlignment: ? Misplacement in xdirection ? Misplacement in ydirection 光刻工藝控制 ? MisAlignment: ? Runout stepping distance too large or too small ? Rotation pattern is rotated on the mask or reticle 光刻工藝控制 B. Field array 光刻工藝控制 ? C. Develop Defects: ? Overdevelop: resist too thin (or nonuniform), develop time too long, poor resist quality (aged) ? Underdevelop (scumming): resist too thick (or nonuniform), develop time too short, developer chemical too weak (aged) ? D
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鄂ICP備17016276號-1