華東交通大學(xué)本科畢業(yè)設(shè)計(jì)模版-在線瀏覽
2024-07-27 04:41本頁(yè)面
【正文】 thesis,GaN and its ternary were grown by a homemade atmosphere pressure metalorganic chemical vapor deposition (MOCVD) and Thomas Swan 62” MOCVD systems. High bright blue LED wafers were obtained by optimizing the nitrides growth technology and wafer structure. Some encouraging results are following as:1. We present the idea of using a buffer layer of deviation from stoichiometry for materials growth on large lattice mismatch substrates. This idea was realized in nitrides growth in this thesis. The epilayer crystalline quality was improved and the dislocation density was decreased by using GaN low and high temperature buffer layers of deviation from stoichiometry. The RBS/channeling spectra exhibited that the minimum yield χmin of GaN layers was just only %. The leak electric current of GaN based LED was obviously decreased and lower than 1μA at 5 volt reverse voltage by using this new buffer technology.…………This work was supported by 863 program in China.關(guān)鍵詞用Times New Roman小4號(hào)加粗、居左頂格、單獨(dú)占行，關(guān)鍵詞之間用分號(hào)間隔 Keyword: Nitrides；MOCVD；LED；Photoluminescence；RBS/channeling；Optical absorption頁(yè)眉：中文宋體，小五號(hào)，居中目錄目錄用小2號(hào)黑體字、居中摘要 ⅠAbstract Ⅱ第一章 GaN基半導(dǎo)體材料及器件進(jìn)展（多數(shù)文章為“緒論”） 11 .1 III族氮化物材料及其器件的進(jìn)展與應(yīng)用 11. 2 III族氮化物的基本結(jié)構(gòu)和性質(zhì) 41. 3 摻雜和雜質(zhì)特性 121. 4 氮化物材料的制備 131. 5 氮化物器件 191. 6 GaN基材料與其它材料的比較 22目錄內(nèi)容最少列出第一級(jí)標(biāo)題（章）和第二級(jí)標(biāo)題（節(jié)）；前者用4號(hào)黑體字，后者用4號(hào)宋體字，第三級(jí)標(biāo)題用4號(hào)楷體字，居左頂格、單獨(dú)占行，每一級(jí)標(biāo)題后應(yīng)標(biāo)明起始頁(yè)碼1. 7 本論文工作的內(nèi)容與安排 24第二章 氮化物MOCVD生長(zhǎng)系統(tǒng)和生長(zhǎng)工藝 31 2. 1 MOCVD材料生長(zhǎng)機(jī)理 31 2. 2本論文氮化物生長(zhǎng)所用的MOCVD設(shè)備 32…………
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