cmos制造工藝流程簡(jiǎn)介-展示頁
2025-02-15 20:34本頁面
【正文】 Implantation P+ or As+ (N+) implant dopes the poly (typically 5 1015 cm2) Polysilicon Gate Deposition ? um SiO2 多晶硅薄膜 15 熱分解 ? Photolithography Mask 6 pattern alignment and UV exposure ? Plasma Etch Anisotropic etch 各向 異 性 蝕 刻 Vertical etch rate high Lateral etch rate low Gate Patterning （ 柵極 的 圖 形化 ） Rinse away nonpattern PR ? Clorine (氯 )or Bromine (溴 ) based for SiO2 selectivity 16 目標(biāo)： ?NMOS器件中的 N注入 區(qū) ?PMOS器件中的 P注入 區(qū) ?多晶硅柵的兩側(cè)形成側(cè)壁隔離層的薄氧 化層 前端或延伸區(qū) (LDD)的形成 17 LDD: ? Lightly Doped Drain (輕摻雜 漏 ) ? Reduce short channel effects due to gate voltage magnitudes and electric fields ? Source and Drain must be layered as NMOS:N+ N P or PMOS: P+ P N Extension (LDD) Formation NMOS ? Photolithography Mask 7 pattern alignment and UV exposure Rinse away nonpattern PR P+ ion bombardment 50keV for 5 1013cm2 ? Strip Photoresist ? Ion Implantation 18 ? Photolithography ? Mask 8 pattern alignment and UV exposure ? Rinse away nonpattern PR ? Ion Implantation ? B+ ion bombardment ? 50 keV for 5 1013cm2 ? Strip Photoresist Extension (LDD) Formation PMOS 19 SiO2 隔離介 質(zhì)層 ? CVD or LPCVD Deposition of SiO2 ? Silane and Oxygen Or ? um ? Provides spacing between gate and sourcedrain. SiO2 Spacer Deposition 20 ? Photolithography ? Mask 6 oversized pattern alignment and UV exposure ? Rinse away nonpattern PR ? Vertical etch rate high ? Lateral etch rate low ? Strip Photoresist Anisotropic Spacer Etch ? Plasma Etch ? Anisotropic etch ? Flourine based 21 ? Screen Oxide Growth ? Thin SiO2 layer ~10 nm to scatter the implanted ions ? Photolithography ? Mask 9 pattern alignment and UV exposure ? Rinse away nonpattern PR ? Ion Implantation ? As+ ion bombardment ? 75 keV for 24 1015cm2 ? Strip Photoresist NMOS Source and Drain Implant 源漏區(qū)的形成 Arsenic ? Reduce channeling 22 ? Photolithography ? Mask 10 pattern alignment and UV exposure ? Rinse away nonpattern PR ? Ion Implantation ? B+ ion bombardment ? 510 keV for 13 1015cm2 ? Strip Photoresist PMOS Source and Drain Implant 23 ? N+ and P+ Drivein ? Thermal diffusion of dopant to shallower than desired depth ?Drivein is a cumulative process! ? Dry Furnace (N2 ambient) ? Anneal 30 min 900?C or RTA 60 sec 1000 ?C 1050 ?C Transient Enhanced Diffusion (TED 瞬 態(tài) 增強(qiáng) 擴(kuò) 散 ) ? Higher than no
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