化學(xué)專業(yè)外文資料翻譯--具有高靈敏度的甲醛氣體傳感器的制備及其氣敏特性(參考版)
2025-05-17 15:25本頁面
【正文】 — 41 — 2 外文譯文 The fabrication and gassensing characteristics of the formaldehyde gas sensors with high sensitivity Abstract Gassensing characteristics of CdOmixed In2O3 to formaldehyde were investigated. Gas sensors of indirect heating type were fabricated by the sensitive materials. The phases in the resulting materials and the morphologies of the sensing layers were characterized by Xray diffraction (XRD) and scanning electron microscopy (SEM), respectively, before and after calcination. The effects of operating temperature on the sensor response and the response versus gas concentration properties of the CdO–In2O3 sensors were investigated. It was shown that the sensors exhibited good response properties to formaldehyde gas at low operating temperature, making them to be promising candidates for practical detectors to formaldehyde gas. 1. Introduction As an important industrial chemical, formaldehyde is utilized in the manufacturing of building boards, plywood, and lacquer materials [1,2]. Moreover, it is an intermediate in consumer products, such as detergents and soaps, and also used in phar macology and medicine because of its sterilization property. However, the investigated results showed that formaldehyde could cause many damages to the human body because it is a volatile and deleterious pound [3,4]. Therefore, effective methods to monitor formaldehyde have been demanded for atmospheric environmental measurement and control. The fabrication of gas sensors is thought to be a desirable means for monitoring the gases. Our present investigation mainly deals with the detection of formaldehyde. Although gas sensors based on semiconductor metal oxides provide the safe detection of toxic or flammable gases, they still have some limitations and challenges such as sensitivity, selectivity, longterm stability, and so on. To overe the disadvantages of semiconductor metal oxide gas sensors, the research on preparation and doping of semiconductor metal oxides had been done. Indium oxide is a promising semiconductor material with a wide band — 42 — gap ( eV), whose electron concentration is determined mainly by the concentration of stoichiometric defects (such as oxygen vacancy) like other metal oxide semiconductors. In view of the sensing mechanism, the particle size, defects, the properties of surface and interface, and stoichiometry directly affect the state and amount of oxygen species on the surface of sensors, and consequently the performance of the metal oxidebased sensors. Therefore, in order to enhance and improve the gas sensing performances (sensitivity, selectivity, good thermal stability, and lower operating temperature), In2O3 is usually prepared in a nanostructured form and/or doped with suitable noble metals and/or metal oxides [5–11].Asa singleponent oxide, In2O3 is a promising candidate for the detection of oxidizing gases because of its good se
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