【正文】 or wafer, mm VEL1 : Feed speed for wafer, um/sec SK1 : Spark Out Time, Second RP1 : Rapid approaching Position for wafer, mm F2 WP= WV=5 DRP= TC=10CNT=02EN=1 WP : Stock removal rate for Dressing stone, mm WV : Feed speed for Dressing stone, um/sec DRP : Rapid approaching position for Dressing stone, mm TC : After Auto Dressing process, RP1(Rapid approaching position for wafer) will be added with this distance. Now it set 10 um CNT : When the count of wafer reached to this parameter, then after you pushed START button in the next Auto Run Mode, the Auto Dressing process will be started automatically. This parameter will be count in the program, and will not count in Add Work Mode. Maximum is 99. EN : Decide use above CNT function or not. When you input 1 for this parameter, then it means you want to use CNT function. But, if you input other figure not 1, for example, 2, 3, 4..., then it means you don39。t want to use CNT function. NO. : Display the number of wafer in the screen. After the Auto Run Mode process started, the figure will be plus 1. During Add Work Mode process, the figure will not increased. After the Auto Dressing, the figure will be changed to 1. Change the screen : After Auto Run Mode or Add Work Mode, the display will be changed to Menu Screen. This function is to decrease the treatment of switch. Message DRP + DWP 40 mm = “CHECK DRESS STONE When this message displayed, you couldn39。t continue the process. Change the Dressing Stone with new one and find the reference position for dressing stone(DRP). The set data is dicided when the working wheel is new one, and Dressing Stone remained 2mm. DRP + DWP POS + RP = “WRONG DATA INPUT When this message displayed, you couldn39。t continue the process. Change the DRP and then start working process. Please refer to attached paper for the test result with new program3. Remarks 1) Clean inside of the Drain pipe to prevent overflow of coolant. 2) Send the Vbelt for work axis motor. 7M650 7M640 or 7M630. 2EA 3) Paste the grease every month to prevent the coolant go into the dressing axis spindle. 4) CDROM included PLC and Controller39。s program and source. 5) Send a updated Instruction Manual 6) Let know the exact Spec. of Sensor for Dressing axis cylinder.(DA90, SMC) and timing belt for dressing axis(114XL, Mitsubishi) 7) Give inform about New grinding wheel for 99% Alumina with lower bonding power4. Comparison between old and new program 1) Old program Positive : Auto Dressing process started when the rotary speed dropped under set rpm. It means that we could work with the real surface condition of working wheel. Negative : Auto Dressing process didn39。t started for same grinding rate. After Auto Dressing process, the final size of wafer will be thinner than without Auto Dressing. If there is Auto Dressing process during Add Work Mode working, the final size of wafer will be thinner than during Auto Run Work Mode working. If the Auto Dressing condition detected during Spark Out process, then it ignored. When the surface condition of working wheel is not good, so the ungrinded part of wafer became thicker, then when the auto dressing condition detected, it could influence to the position detection of controller.Program : 7950/8000 byte(Almost Full) 2) New program Positive : Auto Dressing process will be done period independent of the surface condition of wafer(Stability) The process is simple. Program : 7400/8000 byte(Could be extended) Negative : In one Auto Run Mode process, Auto Dressing process could be occurred just one time. So the application could be limited. Dressing process time : Old program 2 min 30 sec, New program 1 min. After grind more than 10 Wafer, we make find the reference position. So, we can save the process time.(At 1st machine, we have found the reference position after every 3 wafer) Grinding test data with new program.( mm) TC=6WaferModeSet Data(POS)Real SizeAuto Dressing(?)RemarksAutoAddSemiDressing : Start with SemiDressing procedureDWP:DWV:5DRP:TC:6CNT:2EN:1RP:1 ~11 ~2 ~21 ~3 ~ 31 ~4 ~41 ~5 ~ 51 ~6 ~61 ~7 ~ 71 ~8 ~81 ~9 ~ 91 ~10 ~101 ~11 ~ 111 ~12 ~121 ~ After reset, change the TC 610 um ( ) TC=10WaferModeSet Data(POS)Real SizeAuto Dressing(?)RemarksAutoAddStart with SemiDressing procedureDWP:DWV:5DRP:TC:10CNT:2EN:1RP:1 ~11 ~2 ~21 ~3 ~ 31 ~4 ~41 ~5 ~ 51 Broken6 ~61 ~7 ~ 71 ~8 ~81 ~9 ~ 91 ~10 ~101 ~11 ~ 111 ~12 ~121 ~13 ~ 131 ~14 ~141