反激的典型波形-資料下載頁
2025-06-26 01:07本頁面
【正文】 igher peak currents on the primary side.因為１００伏特的反射電壓，比較８００伏特解決方案它有更小的占空比。小占空比實現(xiàn)同樣的功率輸出必須使用更高的一次側峰值電流。Fig. 27 Drainsource voltage and drain current of quasi resonant 600V flyback圖２７?。叮埃胺販手C振反激變換器的漏源極電壓和漏極電流Flyback in quasi resonant mode with 800 V MOSFET 使用８００伏特場效應晶體管的準諧振反激變換器The drainsource voltage (Fig. 28) starts oscillating at the end of the flyback phase and reaching the minimum of 100V when the MOSFET turns on. The turning on current spike is low. 漏源極電壓（圖２８）在反射過程結束后并減小到１００伏特時場效應晶體管導通。開通電流尖刺比較低。The duty cycle is higher pared to a 600V solution due to a higher reflected voltage of 390V. Longer duty cycle for the same output power results in lower peak currents on the primary side.因為有３９０伏特的反射電壓，所以有比６００伏特解決方案更大的占空比。更大的占空比實現(xiàn)同樣的輸出功率可以使用更低的一次側峰值電流。Fig. 28 Drainsource voltage and drain current of quasi resonant 800V flyback圖２８?。福埃胺販手C振反激變換器的漏源極電壓和漏極電流Comparison of spectra 干擾頻譜比較The spectra of the drainsource voltages for corresponding flyback design (Fig. 26Fig. 27 and Fig. 28) are shown in Fig. 29.相應設計的反激變換器（圖２６、圖２７和圖２８）的漏源極電壓干擾頻譜如圖２９所示。Fig. 29 Spectra of the drainsource voltage (simulated)圖２９ 漏源極電壓的頻譜（仿真）As it can be seen the voltage spectrum of the 800V quasi resonant flyback is higher at frequencies below 1 MHz, and is getting lower above 1 MHz pared to both 600V designs. This can be explained by two major differences of the 800V drainsource voltage waveform. First, the clamping voltage during the MOSFETs turning off is 800V, what is higher then of 600V. It leads to higher harmonics amplitudes in lower frequency range. Second, the turn on occurs in voltage minimum due to quasi resonant switching, which results in lower spectrum in higher frequency range.和６００伏特設計比較，８００伏特準諧振反激變換器的電壓頻譜在１兆赫茲以下更高一點，在１兆赫茲以上開始變小。這里有兩條理由可以解釋８００伏特漏源極電壓波形的兩個差異。第一，在場效應晶體管關斷期間鉗位電壓是８００伏特，高于６００伏特。它產生低頻段的高振幅。第二，開通發(fā)生在準諧振開關電壓的最小值，這導致更高頻段頻譜中更低的幅值。Due to the fact, that the 800V quasi resonant flyback has lower peak current, its spectrum is significantly lower across almost plete frequency range. 事實上，８００伏特準諧振反激變換器擁有更低的峰值電流，它的頻譜意味著在全頻帶有更低的幅值。The 800V quasi resonant design with lower current peak and lower drainsource voltage during turning on of the MOSFET demonstrates advantages in conducted EMI spectra regarding the primary side.擁有更低峰值電流和場效應晶體管漏源極開通電壓的８００伏特準諧振設計展示出一次側傳導電磁干擾降低的優(yōu)勢。
醫(yī)療健康相關推薦
鄂ICP備17016276號-1