【文章內(nèi)容簡介】 TLE=Active Region“ LABEL=LOG(CONCENTRATION) BOTTOM=13 TOP=21 RIGHT=5 =5 COLOR=2 SELECT Z=LOG10(PHOSPHORUS) ^AXES ^CLEAR =4 COLOR=4 SELECT Z=LOG10(ARSENIC) ^AXES ^CLEAR =2 COLOR=3 SELECT Z=LOG10(ANTIMONY) ^AXES ^CLEAR =3 COLOR=3 33 2022/2/14 第 36頁 /共 80頁 二維結(jié)構(gòu)圖 ? SCALE = COLOR SILICON COLOR=7 COLOR OXIDE COLOR=5 COLOR POLY COLOR=3 COLOR ALUM COLOR=2 工藝仿真 33 2022/2/14 第 37頁 /共 80頁 二維網(wǎng)格圖 ? GRID =2 = 工藝仿真 33 2022/2/14 第 38頁 /共 80頁 等濃度線繪制 ? SELECT Z=LOG10(BORON) TITLE=”Contours of Boron Concentration” SCALE = FOREACH X ( 17) CONTOUR VAL=X COLOR=2 END CONTOUR VAL=16 =2 COLOR=2 工藝仿真 33 2022/2/14 第 39頁 /共 80頁 閾值電壓 ? ELECTRIC X= THRESHOLD + NMOS V=0 2 ” + =S4EX4DS1 ELECTRIC X= THRESHOLD + NMOS V=0 3 VB= + =S4EX4DS2 =S4EX4DS1 COLOR=3 LINE=2 LABEL LABEL=Vbs=0 X= Y=9E5 RIGHT =S4EX4DS2 ^CL ^AX LABEL LABEL=Vbs= X= Y= RIGHT + =I(Drain) (Amps)“ + =V(Gate) (Volts) + TOP=1E4 BOT=0 RIGHT= COLOR=2 工藝仿真 33 2022/2/14 第 40頁 /共 80頁 結(jié)電容 CV特性 ? ELECTRIC X= JCAP JUNCTION=1 V=0 5 SELECT TITLE=S/D Junction C” ELECTRIC COLOR=2 ^CL ^AX 工藝仿真 33 2022/2/14 第 41頁 /共 80頁 MOS電容 CV特性 ? ELECTRIC X= MOSCAP NMOS V=”5 5 ” =S4EX4DS3 ELECTRIC X= MOSCAP NMOS V=”5 5 ” LOW =S4EX4DS4 ELECTRIC X= MOSCAP NMOS V=”5 5 ” DEEP SELECT TITLE=”MOS CV” LABEL LABEL=”Low” X=3 Y= LABEL LABEL=”High” X=3 Y= LABEL LABEL=”Deep” X=3 Y= =S4EX4DS3 COLOR=3 LINE=2 =S4EX4DS4 ^CL ^AX COLOR=4 LINE=3 ELECTRIC COLOR=2 ^CL ^AX 工藝仿真 目錄 2022/2/14 第 42頁 /共 80頁 形成步驟 NMOS的工藝仿真 2022/2/14 第 43頁 /共 80頁 掩膜板（ ） TL1 0100 1e3 0 5000 4 Field 1 0 3900 Poly 1 0 0650 Contact 2 0 1950 3250 5000 Metal 1 1300 5000 NMOS的工藝仿真 2022/2/14 第 44頁 /共 80頁 網(wǎng)格定義及結(jié)構(gòu)初始化 $ Define the grid MESH = $ Read the mask definition file MASK = $ Initialize the structure INITIALIZE 100 BORON=5E15 NMOS的工藝仿真 SCALE GRID =2 = 2022/2/14 第 45頁 /共 80頁 場區(qū)刻蝕 $ Initial oxidation DIFFUSION TIME=30 TEMP=1000 DRY HCL=5 $ Nitride deposition and field region mask DEPOSIT NITRIDE THICKNESS= SPACES=4 DEPOSIT PHOTORESIST POSITIVE THICKNESS=1 EXPOSE MASK=Field DEVELOP ETCH NITRIDE TRAP ETCH OXIDE TRAP UNDERCUT= ETCH SILICON TRAP THICKNES= UNDERCUT= $ Boron field implant IMPLANT BORON DOSE=5E12 ENERGY=50 TILT=7 ROTATION=30 ETCH PHOTORESIST ALL NMOS的工藝仿真 2022/2/14 第 46頁 /共 80頁 NMOS的工藝仿真 2022/2/14 第 47頁 /共 80頁 場氧化及閾值調(diào)整 $ Field oxidation METHOD COMPRESS DIFFUSION TIME=20 TEMP=800 =1000 DIFFUSION TIME=180 TEMP=1000 WETO2 DIFFUSION TIME=20 TEMP=1000 =800 ETCH NITRIDE ALL $ Unmasked enhancement implant IMPLANT BORON DOSE=1E12 ENERGY=40 TILT=7 + ROTATION=30 NMOS的工藝仿真 2022/2/14 第 48頁 /共 80頁 繪制網(wǎng)格圖 $ Plot the initial NMOS structure SELECT Z=LOG10(BORON) + TITLE=LDD Process NMOS Isolation Region SCALE GRID =2 = NMOS的工藝仿真 2022/2/14 第 49頁 /共 80頁 繪制等濃度線 $ Plot the initial NMOS structure SELECT Z=LOG10(BORON) TITLE=LDD Process NMOS Isolation Region SCALE GRID =2 = SCALE = $ Color fill the regions COLOR SILICON COLOR=7 COLOR OXIDE COLOR=5 $ Plot contours of boron FOREACH X (15 TO 20 STEP ) CONTOUR VALUE=X LINE=5 +