eda課程設(shè)計(jì)報(bào)告n溝道m(xù)os管工藝模擬與器件模擬(完整版)
【正文】 ess oxide =1 = vt adjust implant 閾值電壓調(diào)整注入 implant boron dose=2e12 energy=10 pearson structure outfile= depo poly thick= divi=10 structure outfile= 柵刻蝕 etch poly left = structure outfile= 多晶硅氧化 method fermi press diffuse time=3 temp=920 weto2 press= structure outfile= 多晶摻雜 implant phosphor dose= energy=15 pearson structure outfile= depo oxide thick= divisions=8 structure outfile= etch oxide dry thick= structure outfile= implant arsenic dose= energy=30 pearson structure outfile= method fermi press diffuse time=1 temp=900 nitro press= structure outfile= pattern s/d contact metal etch oxide left = deposit alumin thick= divi=2 etch alumin right = structure outfile= Extract design parameters extract final S/D Xj extract name=nxj xj silicon =1 = =1 extract the N++ regions sheet resistance extract name=n++ sheet rho material=Silicon =1 = =1 extract the long chan Vt extract name=n1dvt 1dvt ntype vb= qss=1e10 = extract the surface conc under the channel. extract name=chan surf conc impurity=Net Doping \ material=Silicon =1 = structure mirror right electrode name=gate x= electrode name=source x= electrode name=drain x= electrode name=substrate backside structure outfile= tonyplot yaojinpeng_nmos*.str go atlas mesh infile= set material models models cvt srh print contact name=gate interface qf=2e10 method gummel newton solve init solve vgate= outfile=solve_tmp1 solve vgate= outfile=solve_tmp2 solve vgate= outfile=solve_tmp3 solve vgate= outfile=solve_tmp4 load infile=solve_tmp1 log outf= solve name=drain vdrain=0 vfinal= vstep= load infile=solve_tmp2 log outf= solve name=drain vdrain=0 vfinal= vstep= load infile=solve_tmp3 log outf= solve name=drain vdrain=0 vfinal= vstep= load infile=solve_tmp4 log outf= solve name=drain vdrain=0 vfinal= vstep= extract max current and saturation slope extract name=nidsmax max(i.drain) extract name=sat_slope slope(minslope(curve(v.drain,i.drain))) tonyplot overlay st nmo
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