第4章ic工藝之離子注入-免費(fèi)閱讀
【正文】 橫向擴(kuò)散小 7。其它（如：離子束表面處理） Buried Implanted Layer nwell pwell p? Epi layer p+ Silicon substrate p+ Buried layer Retrograde wells 埋層注入，替代埋層擴(kuò)散和外延 控制閂鎖效應(yīng) Retrograde Well nwell pwell p+ Buried layer p+ Silicon substrate ntype dopant ptype dopant p++ n++ 倒置井：閂鎖效應(yīng)和穿通能力 Punchthrough Stop nwell pwell p+ Buried layer p+ Silicon substrate ntype dopant ptype dopant p+ p++ n+ n++ 穿通阻擋 Implant for Threshold Voltage Adjustment nwell pwell p+ Buried layer p+ Silicon substrate ntype dopant ptype dopant p+ p++ p n+ n++ n 閾值電壓調(diào)整 SourceDrain Formations + + + + + + + + + + + + + + + + + + + + + + + + nwell pwell p+ Buried layer p+ Silicon substrate p+ S/D implant n+ S/D implant Spacer oxide Drain Source Drain Source b) p+ and n+ Source/drain implants (performed in two separate operations) + + + + + + + + nwell pwell p+ Buried layer p+ Silicon substrate pchannel transistor p– LDD implant nchannel transistor n– LDD implant Drain Source Drain Source Poly gate a) p– and n– lightlydoped drain implants (performed in two separate operations) Dopant Implant on Vertical Sidewalls of Trench Capacitor n+ p+ Tilted implant Trench for forming capacitor 溝槽電容器（取代 DRAM的平面存儲(chǔ)電容）的側(cè)壁摻雜 UltraShallow Junctions 180 nm 20 197。遮擋 (注入陰影效應(yīng) Implant Shadowing)（ P119） 4. 硅片充電 Resist a) Mechanical scanning with no tilt Ion beam b) Electrostatic scanning with normal tilt Resist Electron Shower for Wafer Charging Control Adapted from Eaton NV10 ion implanter, circa 1983 + + + + + + + + + + + + + + + + + + + + + + + + + + + + + +
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