【正文】
這個測溫儀器不受好評由于常見的儀器故障回收,由于產(chǎn)生的飄移當(dāng)使用熱敏電阻所引起的在探測原件上不可避免的變化由于年代問題。在低溫的情況下(接近零下 20攝氏度時),這時測量電流非常小,測量的精度主要局限于靈敏安培表的靈敏度。 眾所周知的是直流晶體管電流放大器非常容易被外界溫度的變化所影響。兩個探測晶體管與放大器的晶體管一起被安裝在溫度傳導(dǎo)比較差的導(dǎo)體有機玻璃載體中,并且?guī)в醒由斐鰜淼慕饘倜币员氵@個儀器在短時間內(nèi)可以測量得到外界的溫度。對于這個被設(shè)計的儀器,對于這個被設(shè)計的高度依賴于飽和電流,這個飽和電流實際上不受電壓源的影響的特性被應(yīng)用在測量溫度的目的上。電壓源的錯誤在這種 測量溫度的方法中很大程度上是由于熱敏電阻和放大器的特性的漂移所導(dǎo)致的,同樣由于不可預(yù)料的改變在電纜和其他的電阻橋臂中。 飽和電流(很大程度上取決于于周圍環(huán)境的溫度)在反向 偏置的 PN 結(jié)中已經(jīng)被用來達(dá)到測量的目的。 設(shè)備并不是十分昂貴并且具有一些優(yōu)勢在設(shè)備的簡易的結(jié)構(gòu)和操作方面上, 同比于其他類型的測量地?zé)岬臏y量儀器。 被描述在這片論文當(dāng)中這個儀器的設(shè)計和構(gòu)造是被應(yīng)用在印度地質(zhì)調(diào)查的冰川探險隊當(dāng)中,在印度地質(zhì)調(diào)查中研究溫度的變化隨著在冰川鉆井內(nèi)部中深度的變化。 對于這個測溫儀器的電子電路的電路圖示分析如下圖 1所示。這個有機玻璃載體在底部以注入的方式與防水的黃銅完美相連(構(gòu)造成完全防水并且密封的空間)。這主要是由于操作點的轉(zhuǎn)換所引起的電流增益和 i0的的變化在溫度的影響下。在精確度上的局限在如此低的溫度中同樣也有 一部分原因是由于儀器表面電流泄露的事實,然而這是可以被控制在非常小的范圍內(nèi)的,變得可以與飽和電流相比。目前的儀器由于漂移所產(chǎn)生的影響是很微小的當(dāng)校準(zhǔn)曲線重復(fù)刻畫時,基本上沒有任何明顯的偏差。對于硅晶體管來說卻是很有必要減少電壓源的電壓為了削弱放大器集電極耗散率。測量的精度依賴于測量時的溫度。溫度曲線實際上是一條直線并且被發(fā)現(xiàn)適應(yīng)于經(jīng)驗關(guān)系 i =34 e 。 Vol. 61, 1965/I1) 一種新型的半導(dǎo)體測溫計 照片內(nèi)包含了一套完整的儀器設(shè)備 ,包括了表面設(shè)備,電纜絞車的傷口以及如圖所示 3 的探針。因此,飽和電流的大小很大程度取決于溫度和實際的指數(shù)增加方式。在測試下的溫度被從一個校準(zhǔn)圖表或校準(zhǔn)曲線中所展示的讀取后,不平衡的電壓反抗溫度在實驗室預(yù)先的構(gòu)造中并且是被控制得情況下。s time, is noted. The temperature under measurement is then deduced from the calibration curve. 3. Conclusion and discussion The present instrument has been specially designed for the study of temperature inside a glacier borehole. The measurement accuracy is dependent on the temperature under measurement. At low temperature (near 20 0 C) when the current i is small, the measurement accuracy is mainly limited by the meter sensitivity. The limitation in accuracy at such low temperature is also due to the fact that the surface leakage current, however small it may be made, bees parable to the saturation current. The instrument designed cart conveniently be used for temperature measurements between — 150 C to + 100 C . Measurement accuracy is about C, C and C when the temperature under measurements is 100 C , O0 C and +50 C respectively. The instrument may be made more sensitive by increasing the number of sensing transistors in parallel or alternatively by adding additional current amplifying stages in cascade. The same principle may be utilised for higher temperature measurements. It must be mentioned in this connection that the maximum temperature should not exceed the normal working temperature {about 500 C for Germanium transister) range of the transistor used. With Silicon transistor, however, this range may be increased appreciably. For the measurement of higher temperature, it may be necessary to reduce the supply voitage in order to cut down the collector dissipation rate of the amplifier. This instrument suffers from the mon draw back due to drift as the other type which utilises thermistor caused by the unavoidable change in the characteristic of the sensing element due to aging. Effect of this drift in the present instrument is small as the calibration curve has