半導(dǎo)體封裝制程與設(shè)備材料知識(shí)介紹-fe(文件)
【正文】 l 靜夜四無(wú) 鄰 ，荒居舊 業(yè)貧 。BOX OUTMG紅燈 —— 機(jī)器在自動(dòng)運(yùn)行過程中出現(xiàn)了故障，會(huì)立即停機(jī)，需要馬上處理。 Area = π(y/2) 178。u Ball Shear 計(jì)算公式u Intermetallic（ IMC有 75%的共晶 ,Shear Strength標(biāo)準(zhǔn)為＞178。m . 3. Substrate Lead width Pitch (Min.): 40 181。PadSubstrate Basic InformationCore： 玻璃纖維 +樹脂 ， 鍍銅層 ： 25um+/5um鍍鎳層 ： 鍍金層 ： Solder Mask： 25um+/5um總厚度 ： 發(fā)料烘烤 線路形成 (內(nèi)層 ) AOI自動(dòng)光學(xué)檢測(cè) 壓合4 上片上片 (Die Bond) Bond 相關(guān)工藝上片上片 (Die Bond) Bond 相關(guān)材料A Substrate / Lead frame B Die Attach FilmC Wafer after Saw D Magazine 彈夾Substrate Basic Structure:CoreAuNiCuSolder 3. Angle Accuracy : degree。Die Attach process pick up dieDie。3. 負(fù)載電流較小。刀子磨耗較大。切割品質(zhì)較好。理想的切割深度須切入膠膜 :理想的切割深度可防止1.、濃度及 NickelRPM27HDDC:RPMS1440:切速 :轉(zhuǎn)速 規(guī)格 — DY,WaferAlignmentTransfer SAW ADHESION?No die flying off?No die crack工藝對(duì)麥拉的要求：3。Detaping Centrifugal CleanCoarse Grind 90% Fine半半 導(dǎo)導(dǎo) 體體 制制 程程Oxidization(氧化處理 )Lithography(微影 )Etching(蝕刻 )Diffusion Ion Implantation(擴(kuò)散離子植入 )Deposition(沉積 )Wafer Inspection(晶圓檢查 )Grind Dicing(晶圓 研磨及 切割 )Die Attach(上片 )WireBonding(焊線 ) Molding(塑封 ) Package(包裝 )Wafer Cutting(晶圓切斷 )Wafer Reduce (晶圓減薄 )Laser Cut package saw(切割 成型 )Testing(測(cè)試 )Laser mark(激光印字 )IC制造開始前段結(jié)束后段封裝開始製造完成封封 裝裝 型型 式式 (PACKAGE)Through HoleMountShapeMaterial Lead Pitch No of I/OTypical FeaturesCeramicPlastic mm(100miles) 8 ~64DIPDual InlinePackagePlastic mm(100miles)1 direction lead3~25SIPSingle InlinePackage封封 裝裝 型型 式式 Through HoleMountShapeMaterial Lead Pitch No of I/OTypical FeaturesPlastic mm(100miles)1 directionlead16~24ZIPZigzagInlinePackagePlastic mm(70miles) 20 ~64SDIPShrinkDual InlinePackage封封 裝裝 型型 式式 Through HoleMountShapeMaterial Lead Pitch No of I/OTypical FeaturesCeramicPlastic mm(100miles)halfsize pitch in the width direction24~32SKDIPSkinnyDualInlinePackageCeramicPlastic mm(100miles)PBGAPin GridArray封封 裝裝 型型 式式 SurfaceMount Shape Material Lead Pitch No of I/OTypical FeaturesPlastic mm(50miles)2 direction lead8 ~40SOPSmallOutlinePackagePlastic, , mm4 direction lead88~200QFPQuadFlatPack封封 裝裝 型型 式式 SurfaceMount Shape Material Lead Pitch No of I/OTypical FeaturesCeramic, mm(50, 30miles)2, 4 direction lead20~80FPGFlatPackageof GlassCeramic, mm(50, 40, 30 miles)20~40LCCLeadlessChipCarrier封封 裝裝 型型 式式 SurfaceMount Shape Material Lead Pitch No of I/OTypical FeaturesCeramic mm(50miles)jshape bend4 direction lead18~124PLCCPlastic LeadedChip CarrierCeramic mm 32~200VSQFVerySmallQuadFlatpackAssembly Main ProcessDie Cure(Optional)
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