東南大學(xué)電子器件-金半接觸(參考版)
2025-07-27 20:06本頁(yè)面
【正文】 設(shè)該樣品的電子親和勢(shì)為 ，則它與功函數(shù)為 的金屬接觸時(shí)，功函數(shù)之差為多大？所形成的接觸是整流接觸還是歐姆接觸？ ??? cmn i。s image PE has bee a standard ponent in simple models of the barrier to motion, M(x), experienced by an electron on approaching a metal surface or a metalsemiconductor interface from the inside. 1. Schottky effect ? (The image PE is usually bined with terms relating to an applied electric field F and to the height h (in the absence of any field) of the barrier. This leads to the following expression for the dependence of the barrier energy on distance x, measured from the electrical surface of the metal, into the vacuum or into the semiconductor: – ? Here, e is the elementary positive charge, ε0 is the electric constant and εr is the relative permittivity of the second medium (=1 for vacuum). In the case of a metalsemiconductor junction, this is called a Schottky barrier。acceptor 受主 donor 施主 rebination 復(fù)合 majority 多子 minority 少子 transition region 過(guò)渡區(qū) depletion region 耗盡區(qū) contact barrier 接觸勢(shì)壘 pn junction pn結(jié) heterojunction/異質(zhì)結(jié) EHP 電子空穴對(duì) homojunction/同質(zhì)結(jié) Schottky barrier /肖特基勢(shì)壘 barrier height/勢(shì)壘高度 ideal/理想的 work function/功函數(shù) practical/實(shí)際的 electron affinity/電子親和能 Fermi level/費(fèi)米能級(jí) rectifier /整流器 electrostatic potential/靜電勢(shì) breakdown /擊穿 rectifying contacts/整流接觸 Ohmic contacts/歐姆接觸 surface state/表面態(tài) latticematched/晶格匹配的 tunneling effect/隧道效應(yīng) 半導(dǎo)體器件工作的基本方程 泊松方程 電流密度方程 電流連續(xù)性方程 pppnnnpnpppnnnADsJqRGtpJqRGtnJJJpqDqpJnqDqnJnpNNqrr????????????
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