【正文】 與羧甲基纖維素包鐵顆粒的斥力是由于靜電力量，這種靜電力在高離子強(qiáng)度會(huì)減弱。加100mM氯化鈣時(shí)出現(xiàn)在PH值為8的時(shí)候。第五篇：專業(yè)英語翻譯Forces of Interactions between Bare and PolymerCoated Iron and Silica: Effect of pH, Ionic Strength, and Humic Acids The interactions between a silica substrate and iron particles were investigated using atomic force microscopybased force spectroscopy(AFM).The micrometerand nanosized iron particles employed were either bare or coated with carboxymethyl cellulose(CMC), a polymer utilized to stabilize iron particle effect of water chemistry on the forces of interaction was probed by varying ionic strength(with 100 mM NaCl and 100 mM CaCl2)or pH(4, , and 8)or by introducing 10 mg/L of humic acids(HA).When particles were uncoated, the forces upon approach between silica and iron were attractive at pH 4 and and in 100 mM CaCl2 at pH 8, but they were negligible in 100 mM NaCl buffered to pH 8 and repulsive in water buffered to pH 8 and in HA produced electrosteric repulsion between iron particles and silica, likely due to its sorption to iron sorption to silica was excluded on the basis of experiments conducted with a quartzcrystal microbalance with dissipation with CMCcoated iron was attributed to electrosteric forces, which were damped at high ionic extended DLVO model and a modified version of Ohshima’s theory were successfully utilized to model AFM 、離子強(qiáng)度和腐殖酸對(duì)硅與裸露鐵粒子和高分子聚合物包裹鐵粒子之間相互作用的影響 利用以原子力顯微鏡為基礎(chǔ)的光譜法研究石英基片和鐵顆粒之間的相互作用。第四篇：專業(yè)英語翻譯樁筏基礎(chǔ)的簡(jiǎn)化設(shè)計(jì)方法摘要：在筏板基礎(chǔ)本身并不能滿足設(shè)計(jì)要求情況下，可通過在筏板下增加樁來提高其承載力。在pH=, 在Al(III)/SiO2和Fe(III)/SiO2中的亞硒酸鹽形式內(nèi)球體復(fù)合物，分別地包括雙配位基和單配位基。雖然在pH=,數(shù)據(jù)表明在二進(jìn)制元氧化物系統(tǒng)上亞硒酸鹽比硒酸鹽形成了更強(qiáng)的表面復(fù)合物。在Fe(III)/SiO2體系上的亞硒酸鹽和硒酸鹽的Se金屬鍵長(zhǎng)實(shí)際上是一樣的。然而，SeFe的鍵長(zhǎng)()表明在Fe(III)/SiO2上的硒酸鹽形成了雙配位基的單核配合物(Hug,1997，Peak and Sparks,2002)。亞硒酸鹽在Fe(III)/。基于簡(jiǎn)單的幾何約束，最好的亞硒酸鹽結(jié)合環(huán)境任務(wù)是在Al(III)/SiO2上()在pH=5下是一個(gè)雙配位基、雙核的表面復(fù)合物(鍵長(zhǎng)的范圍是～)。圖5和表4表明了在樣品上進(jìn)行的硒的Kedge EXAFS在pH=。數(shù)據(jù)顯示，對(duì)硒酸鹽Al(III)/SiO2具有更高的親和力，在Fe(III)/SiO2上對(duì)硒酸鹽的吸附能力大于亞硒酸鹽。這個(gè)偽二階動(dòng)力學(xué)模型是最好的模型去描述二元氧化系統(tǒng)的動(dòng)力學(xué)數(shù)據(jù)。對(duì)在Al(III)/SiO2 and Fe(III)/SiO2上的亞硒酸鹽，2 h的接觸會(huì)使95%的亞硒酸鹽被完全除去，吸附也會(huì)接近平衡(圖4a)。至于二元氧化物系統(tǒng)吸附亞硒酸鹽和硒酸鹽的機(jī)制,之前的光譜研究表明,硒的吸附是鋁和鐵氧化物形成內(nèi)球面配合物的配位體與羥基在礦物表面交換(Peak,2006)。亞硒酸鹽的化學(xué)特性和幾何結(jié)構(gòu)類似于磷酸鹽,而硒酸鹽是類似于硫酸鹽(Hayes 1987，wijnja和Schulthess,2000)，兩個(gè)二元氧化物系統(tǒng)對(duì)亞硒酸鹽的吸附大于硒酸鹽。擬合數(shù)據(jù)顯示，分別地由Al(III)/SiO2吸收硒酸鹽和亞硒酸鹽的最大吸附容量(Qmax)，由Fe(III)/SiO2吸收硒酸鹽和亞硒酸鹽的 Qmax是 。因此一個(gè)Ph=、動(dòng)力學(xué)、和吸附實(shí)驗(yàn)。鋁、鐵、硅氧化物是普遍存在于地球地殼的礦物，他們通常被用于除去水中污染物,因?yàn)殇X和鐵氧化物具有較高的表面積和零點(diǎn)電荷(,86范圍內(nèi)，在Al(III)/SiO2 中的亞硒酸鹽吸附受電解質(zhì)濃度影，這并不表示pH值的增長(zhǎng)。硒能提高活動(dòng)的自由羥基自由基(OH)導(dǎo)致高氧化應(yīng)激損害生物(趙et al,2008)。Section 5 Exercise 3 相電壓與相電流之比等于電路的阻抗，符號(hào)為字母Z，阻抗是一個(gè)具有量綱為歐姆的復(fù)數(shù)量。Section 4 Exercise 3 如果一個(gè)電路有兩個(gè)或多個(gè)獨(dú)立源，求出具體變量值（電流或電壓）的一種方法是使用節(jié)點(diǎn)分析法或網(wǎng)孔分析法。我們可以很容易地買到或制造電阻器，但很快我們發(fā)現(xiàn)這種物理元件只有當(dāng)電流、電壓或者功率處于特定范圍時(shí)其電壓——電流之比才是恒定的，并且這個(gè)比值也取決于溫度以及其它環(huán)境因素。（賓語從句）This is how a puter 。（定語從句）The instrument that we often use is very good in 。（狀語從句）It is possible that we use a puter to solve these plicated 。（動(dòng)名詞作主語）By changing the resistance，we can change the ，我們就能改變電流。 stations have ratings between 200 MW and 1500 MW so as to attain the high efficiency and economy of a large ，以實(shí)現(xiàn)大站的高效經(jīng)濟(jì)（運(yùn)行）。 kind of loads, especially those consume energy calculated by standard coals more over 10 thousands of tons per year, has a name of high energy consuming ，尤其是那些年耗能萬噸標(biāo)準(zhǔn)煤以上的負(fù)荷，被稱為高耗能負(fù)荷。一次系統(tǒng)也給經(jīng)過單相三線電路為居民用電和商業(yè)用戶提供120V/240V二次電壓的配電變壓器供電。Electrical energy can be stored in two metal plates separated by an insulating a device is called capacitor or ability to store electrical energy is is measured in farads 電能可儲(chǔ)存在由一絕緣介質(zhì)隔開的兩塊金屬極板內(nèi)。 exists between the conductors and is the charge on the conductors per unit of potential difference between ，等于導(dǎo)體上的電荷（電量）與導(dǎo)體間的電勢(shì)差之比。2)The instruments present include some digital ones which are relative to instruments present include some digital ones relative to 。1)It has been mentioned above that the electrons in a metalare able to move freely through the metal, that their motion constitutes an elec