東南大學(xué)電子器件-金半接觸-資料下載頁
2025-07-24 20:06本頁面
【正文】 e states due to inplete covalent bonds. The metal/semiconductor contacts form always a barrier whatever metals are used. So, to obtain the ohmic contacts for metal/semiconductor, a practical method is by doping the semiconductor heavily in the contact regions. Therefore, if a barrier exists at the interface, the depletion width is small enough to allow carriers to tunnel through the barrier. Tunneling probability can be referred to semiconductor physics(P236238). Typical Schottky Barriers Pinning effect (釘扎效應(yīng)） : because of surface states and interfacial layer – P168 It is easier to obtain the width of the depletion region at MS Schottky junction. 2100021002100)11(2))((2))((2??????????????????????????dapndaadpdadanNNqVxxWNNNNqVxNNNNqVx???For pn junction 2100 )12????????ap NqVxW?2100 )12????????dn NqVxW?For Mn type Schottky barrier For Mp type Schottky barrier PROBLEM 1 ? What is the difference between pn diode and Schottky barrier diode? Problem 2 ? A Schottky barrier is formed between a metal having a work function of and p type Si(electron affinity is 4ev).The acceptor doping in the Silicon is 1017cm3. (a)Calculate qV0 and draw the equilibrium band diagram. (b)Draw the band diagram with forward bias and 2V reverse bias. ? Ge材料 ( ),其中摻有5 1013cm3的施主雜質(zhì)和 1013cm3的受主雜質(zhì)（均勻摻雜）， Dn=100cm2/s，Dp=50cm2/。設(shè)該樣品的電子親和勢為 ，則它與功函數(shù)為 的金屬接觸時，功函數(shù)之差為多大？所形成的接觸是整流接觸還是歐姆接觸？ ??? cmn i
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