【正文】 ilm. Secondary electron in the process of accelerated toward the substrate by the magnetic field Lorenzi magnetic trapped in the plasma region near the target surface, the region a high plasma density, secondary electron in the role of the magnetic field around the target surface in circular motion, the motion path of the electrons is very long, in the course of the campaign with the argon atom impact ionization of argon ion bombardment of targets, after many collisions, the electron energy gradually reduce and get rid of the shackles of the magnetic field lines , away from the target, and ultimately deposited on the substrate. Magnetron sputtering is bound magnetic field and extend the path of movement of electrons, changing the direction of the movement of electrons, to improve the working gas of the ionization rate and the effective use of the electron energy. Electronic destination not just the substrate, the vacuum chamber wall and the anode of the target source is electronic destination. But generally the substrate and the vacuum chamber and the anode at the same electrical potential. The interaction of magnetic and electric fields (EXB drift) of a single electron trajectory was a threedimensional spiral, rather than just in the circular motion of the target surface. The contour of the circumference of the target surface sputtering, that is the cylindrical weeks shape of the shape of the target source of magnetic field lines. The magnetic field lines distribution of direction differences can film a great relationship. EXB the shift mechanism is not just magnetron sputtering, multiarc plating target source, ion source, ion source and so In the second principle. The difference is that the direction of electric field, voltage, current size only.The basic principle of magnetron sputtering is the use of plasma in the Ar02 gas mixture under the action of the electric field and an alternating magnetic field, the accelerated highenergy particles bombarding the target surface energy exchange, the target surface atoms from the original crystal cell to escape, and transferred to the surface of the substrate film.Magnetron sputtering is characterized by a high deposition rate, substrate temperature, good adhesion of the film, large area coating. The technology can be divided into a DC magnetron sputtering and RF magnetron sputtering method. sputtering technique Sputtering in a vacuum chamber, the charge energy particle bombardment of the target surface, play target atoms and other particles pass through the particle momentum, and its precipitation on the substrate to form a thin film technology. Sputtering technology can realize the rapid deposition of large area, thin film and the substrate with good adhesion, high density sputtering, pinhole, film controllability and repeatability, etc., and any material can be sputtered which in recent years the rapid development of a wide range of applications. With tens of electron volts energy particles bombarding the material surface, the material will be excited to gas, the use of this phenomenon to the surface of the coating, etching, cleaning and surface analysis of materials. Ion easy acceleration or deflection in the electromagnetic field, so the charge of energetic particles is generally ion. When the ion bombardment of the target surface will have many effects, shown in Figure 1. In addition to the target of atoms and molecules is ultimately involved in the film, the film growth of other effects also have a huge impact.Figure 1 Schematic diagram of a magnetron sputtering mechanism The sputtering mechanism is currently accepted by most people is the Sigmund linear cascade sputtering mechanism. Incident ion bombardment of the target surface, its part of the energy transfer to the surface lattice atoms, causing the movement of the target atoms in Some atoms get energy from the lattice at the shift, and to overe the surface barrier is a direct sputtering。 some can not be divorced from the shackles of the lattice vibration in place and spread to the surrounding atoms, resulting in the temperature of the target l high。 some atoms to obtain a large enough energy to produce a recoil, close to the atomic collision shift, recoil continue to produce high recoil, a process called cascade collision. Cascade collision is part of the atoms reach the surface to overe the barrier to escape, thus creating a cascade sputtering, the sputtering mechanism. When the recoil atom density is not high within the range of cascade collision, the collision between the dynamic recoil atoms to each other can be ignored, this is the linear cascade collision. Sputtering film forming method more typical DC diode sputtering method, threepole (or quadrupole) sputtering and magnetron sputtering. (A) Diode sputtering Diode sputtering is the first use, and is the most simple basic sputtering method. DC diode sputtering device consists of cathode and anode. Target membranes (conductor) made as a cathode, placed on the workpiece rack plating as the anode (ground), and bipolar the spacing general number of centimeters to ten centimeters. When the vacuum chamber electric field strength reaches a certain value, between the poles of the abnormal glow discharge. Ions in Ar + ions are accelerated and bombard the cathode target, the sputtered target atoms form a thin film deposited on the substrate. Such as the use of RF power as a target cathode power supply, but also made the diode RF sputtering device, the device can sputter insulating materials. (B) Threepole sputtering Although the two pole sputtering method is simple, but the discharge instability, and low deposition rate. In order to improve the deposition rate and to improve the film quality, diode sputtering device on the basis of additional hot cathode to produce a threepole sputtering device. Threepole sputtering, the plasma density can be controlled