freepeople性欧美熟妇, 色戒完整版无删减158分钟hd, 无码精品国产vα在线观看DVD, 丰满少妇伦精品无码专区在线观看,艾栗栗与纹身男宾馆3p50分钟,国产AV片在线观看,黑人与美女高潮,18岁女RAPPERDISSSUBS,国产手机在机看影片

正文內(nèi)容

電子類論文word版-資料下載頁

2025-01-16 07:47本頁面
  

【正文】 were able to reproduce the pstatesplitting in pyramidal InAs QDs, by employing a 14band model which re?ects the correctsymmetry of the ZB crystal lattice. We have furthermore successfully applied our code to(111)oriented InGaAs QDs, by employing a correspondingly rotated eightband k p model.123O. Marquardt et al.This symmetryadapted model allows for a description of (111)oriented nanostructures witha significantly smaller putational effort than using a conventional eightband Hamiltonian. The above examples demonstrate the high ?exibility and ef?ciency of our generalisedmultiband k p code.4 總結(jié)和討論 我們已經(jīng)提出了一個(gè)高度概括的多波段KP模型的方法一個(gè)可以用來研究廣泛的半導(dǎo)體納米結(jié)構(gòu)的電子特性。這個(gè)模型在現(xiàn)有的DFT包的S /PHI/NX平面波框架的實(shí)施,讓我們獲得了一個(gè)高效靈活的代碼,通過采用現(xiàn)有的,高度優(yōu)化的只有輕微修改的最小化程序。我們已經(jīng)用我們的軟件將精密的不同水平的KP模型做一個(gè)比較,可以重現(xiàn)P態(tài)分裂在錐體的InAs量子點(diǎn),通過采用反映了ZB晶格正確的對(duì)稱性的14波段模型此外,我們已經(jīng)成功地應(yīng)用了我們的代碼在(111)面向的InGaAs量子點(diǎn),通過采用相應(yīng)的旋轉(zhuǎn)的8頻段KP模型。這種適應(yīng)對(duì)稱性的模型允許了一個(gè)(111)導(dǎo)向的計(jì)算精力比使用傳統(tǒng)的8頻段哈密頓顯著減小的納米結(jié)構(gòu)描述。上面的例子表明了我們廣義的和有效率的多波段KP碼高度的靈活性。ReferencesBahder, T.: Eightband k p model of strained zincblende crystals. Phys. Rev. B 41, 11992–12001 (1990)Baer, N., Schulz, S., Gartner, P., Schumacher, S., Czycholl, G., Jahnke, F.: In?uence of symmetry and Coulomb correlation effects on the optical properties of nitride quantum dots. Phys. Rev. B 76, 075310–075323 (2007)Bester, G., Zunger, A.: Cylindrically shaped zincblende semiconductor quantum dots do not have cylindricalsymmetry: atomistic symmetry, atomic relaxation, and piezoelectric effects. Phys. Rev. B 71, 045318–045329 (2005)Boeck, S., Freysoldt, C., Dick, A., Ismer, L., Neugebauer, J.: The objectoriented DFT program libraryS/PHI/nX. Comput. Phys. Commun. 182, 543–554 (2011)Daudin, B.: Polar and nonpolar quantum dots. J. Phys. Condens. Matter 20, 473201–473215 (2008)Fonoberov, ., Balandin, .: Excitonic properties of strained wurtzite and zincblende GaN/Alx Ga1?xNquantum dots. J. Appl. Phys. 94, 7178–7186 (2003)Hermann, C., Weisbuch, C.: k p perturbation theory in IIIV pounds and alloys: a reexamination. Phys.Rev. B 15, 823–833 (1977)Healy, ., Young, ., Mereni, ., Dimastrodonato, V., Pelucchi, E., O’Reilly, .: Physics of novel sitecontrolled InGaAs quantum dots on (111) oriented substrates. Physica E 42, 2761–2764 (2009)Jancu, ., Scholz, R., De Andrada e Silva, ., La Rocca, .: Atomistic spinorbit coupling and k pparameters in IIIV semiconductors. Phys. Rev. B 72, 193201–193204 (2005)Marquardt, O., Gambaryan, ., Hickel, T., Aroutiounian, ., Neugebauer, J.: Growth process, characterization, and modeling of electronic properties of coupled InAsSbP nanostructures. J. Appl.Phys. 110, 043708–043713 (2011)Marquardt, O., Boeck, S., Freysoldt, C., Hickel, T., Neugebauer, J.: Planewave implementation of the realspace k p formalism and continuum elasticity theory. Comput. Phys. Commun. 181, 765–771 (2010)Marquardt, O., Freysoldt, C., Boeck, S., Hickel, T., Neugebauer, J.: to be submittedMarquardt, O., Mourad, D., Schulz, S., Hickel, T., Czycholl, G., Neugebauer, J.: Comparison of atomistic andcontinuum theoretical approaches to determine electronic properties of GaN/AlN quantum dots. Phys.Rev. B 78, 235302–235310 (2008)Marquardt, O., O’Reilly, ., Schulz, S.: to be submittedMereni, ., Dimastrodonato, V., Young, ., Pelucchi, E.: A sitecontrolled quantum dot system offeringboth high uniformity and spectral purity. Appl. Phys. Lett. 94, 223121–223123 (2009)Pfeffer, P., Zawadzki, W.: Fivelevel k p model for the conduction and valence bands of GaAs and InP. Phys.Rev. B 53, 12813–12828 (1996)Pelucchi, E., Watanabe, S., Leifer, K., Zhu, Q., Dwir, B., De Los Rios, P., Kapon, E.: Mechanisms of quantumdot energy engineering by metalorganic vapor phase epitaxy on patterned nonplanar substrates. NanoLett. 7, 1282–1285 (2007)Pryor, C.: Eightband calculations of strained InAs/GaAs quantum dots pared with one, four, and sixband approximations. Phys. Rev. B 57, 7190–7195 (1998)Schliwa, A., Winkelnkemper, M., Bimberg, D.: Impact of size, shape, and position on piezoelectric effectsand electronic properties of In(Ga)As/GaAs quantum dots. Phys. Rev. B 76, 205324–205340 (2007)Schulz, S., Caro, ., O’Reilly, ., Marquardt, O.: Symmetryadapted calculations of strain and polarization ?elds in (111)oriented zincblende quantum dots. Phys. Rev. B 84, 125312–125325 (2011)Stier, O.: Electronic Properties of Quantum Dots and Wires, Berlin (2000)Stier, O., Grundmann, M., Bimberg, D.: Electronic and optical properties of strained quantum dots modeledby 8band k p theory. Phys. Rev. B 59, 5688–5701 (1999)Stock, E., Warming, T., Ostapenko, I., Rodt, S., Schliwa, A., Tofflinger, ., Lochmann, A., Toropov, .,Moshchenko, ., Dmitriev, ., Haisler, ., Bimberg, D.: Singlephoton emission from InGaAsquantum dots grown on (111) GaAs. Appl. Phys. Lett. 96, 093112–093114 (2010)Zhao, Q., Mei, T.: J. Appl. Phys. 109, 063101–063113 (2011)Zhu, Q., Karlsson, ., Pelucchi, E., Kapon, E.: Transition from twodimensional to threedimensional quantum con?nement in semiconductor quantum wires/quantum dots. Nano Lett. 7, 2227–2233 (2007)123
點(diǎn)擊復(fù)制文檔內(nèi)容
公司管理相關(guān)推薦
文庫吧 www.dybbs8.com
備案圖鄂ICP備17016276號(hào)-1