電子信息專業(yè)英語(yǔ)ppt課件(編輯修改稿)
2025-05-28 18:02 本頁(yè)面
【文章內(nèi)容簡(jiǎn)介】 9。lektr?ud ] 電極 configuration [ k?n fiɡju39。rei??n ] 構(gòu)造，接法 wired 連線，以線加強(qiáng) consume [ k?n39。sju:m ] 消耗 terminals 端子 drain [ drein ] 漏極 channel 溝道 conductivity [k?nd?k39。tiviti ] 導(dǎo)電性 potential [ p?u39。ten??l ] 電壓，電勢(shì) 山東信息職業(yè)技術(shù)學(xué)院電子工程系 Passage B Transistor The transistor is a nonlinear semiconductor device being similar to the diode, monly used as an amplifier or an electrically controlled switch. Because of its fast response and accuracy, the transistor may be used in a wide variety of digital and analog functions, including amplification, switching, voltage regulation, signal modulation, and oscillators. Transistors may be packaged individually or as part of an integrated circuit, which may hold a billion or more transistors in a very small area. So the transistor is being the fundamental building block of the circuitry that governs the operation of puters, cellular phones, and all other modern electronics. 山東信息職業(yè)技術(shù)學(xué)院電子工程系 There are two major transistor categories: The bipolar transistor Also called “the bipolar junction transistor” (BJT) and the field effect transistor (FET).The first type of solidstate electronic transistor was made by researchers William Shockley, John Bardeen and Walter Brattain at Bell Laboratories in December “Bipolar Junction Transistor” was invented by William Shockly in 1950 which is the mon stander of the current transistor. 山東信息職業(yè)技術(shù)學(xué)院電子工程系 The bipolar junction transistor consists of three regions of semiconductor material. One type is called a npn transistor, in which two regions of ntype material sandwich a very thin layer of ptype material. The two ntype material regions of the npn transistor are called the emitter and collector and the ptype material is called the base. npn transistors are symbolized in schematic diagrams such as Fig 23. 山東信息職業(yè)技術(shù)學(xué)院電子工程系 When used as an amplifying element, the base to emitter junction is in a forwardbiased (conducting) condition, and the base to collector junction is reversebiased or nonconducting. Small changes in the base to emitter current (the input signal) cause either holes (for pnp devices) or free electrons (for npn) to enter the base from the emitter. The attracting voltage of the collector causes the majority of these charges to cross into and be collected by the collector, resulting in amplification. 山東信息職業(yè)技術(shù)學(xué)院電子工程系 The only functional difference between a pnp transistor and an npn transistor is the proper biasing (polarity) of the junctions when operating. For any given state of operation, the current directions and voltage polarities for each type of transistor are exactly opposite each other. There are three ways of connecting a transistor, depending on the use to which it is being put. The ways are classified by the electrode that is mon to both the input and the output. They are called: (a) monbase configuration (b) monemitter configuration (c) moncollector configuration 山東信息職業(yè)技術(shù)學(xué)院電子工程系 Although the first transistors and first silicon chips used bipolar transistors, most chips today are FET( field effect transistors) wired as CMOS logic, which con
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