esd保護設(shè)計研討會(英文)(存儲版)
【正文】 opens, latchup4 Temporary Latchup, ground bounce4 Latent Degradation from an ESD eventCalifornia Micro Devices 2023/3/4 下午 01:54:38 5 ESD problem is growing4 Circuits/Systems Old Robust ICs Low speed signals New Sensitive ICs High speed signals4 Environment Old Manufacturing / Corporate New Home / Outdoors / PersonCalifornia Micro Devices 2023/3/4 下午 01:54:38 6ESD Issues for the Designer 4 Must meet ESD specifications4 Select ESD tolerant ponents4 Minimize signal degradation (from R,L C)4 Board space / weight / proper design4 Component cost4 Assembly cost4 Lifetime cost (stability)4 Test the systemCalifornia Micro Devices 2023/3/4 下午 01:54:38 7International ESD Standards4 Human Body Model (HBM) for devices EIA/JESD22A114A ANSI/EOS/ MILSTD883 (method 3015)4 IEC 100042:1995 for systems4 Machine Model (MM) less mon EIA/JESD22A115A ANSI/EOS/4 Charge Device Model (CDM) less mon JESD22c101California Micro Devices 2023/3/4 下午 01:54:38 8Human Body Model (HBM)4 Discharge from 100pF capacitor through kOhm resistor4 6 ESD pulses 3 positive, 3 negative 1 sec separation4 Pintopin testing N(N1)/2 binations4 Used for ponent characterization4 Widely usedCalifornia Micro Devices 2023/3/4 下午 01:54:38 9HBM Current WaveformRise Time: 2 nS Tr 10 nSCalifornia Micro Devices 2023/3/4 下午 01:54:38
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