微機電系統(tǒng)ppt課件-免費閱讀
【正文】 C) (3) ( 600176。m features ? Diffraction effects are minimized ? Electron beam can detect surface features for very accurate registrar Cons – Swelling occurs when developing negative electron beam resists, limiting resolution – Expensive as pared to light lithography systems – Slower as pared to light lithography systems – Forward scattering in the resist and back scattering in the substrate limit resolution 5. Diffusion and Implantation of Dopants film addition ? PR Spin on ? Thermal oxidation ? Thermal evaporation ? Ebeam evaporation ? Sputtering process ? CVD (LPCVD,PECVD) ? Electroplating 1) Thermal oxidation growing on Si Dry oxidation: (1150176。 C, 4hr) Wet oxidation: ( 800176。 C~700176。 C~900176。m ? Reduction in diffraction, reflection, and scattering effects ? Not affected by anic defects in mask Cons – Shadow printing – Lateral magnification error – Brighter xray sources needed – More sensitive resists needed – Difficult fabrication of xray mask 4. Electron Beam Lithography As scanning electron microscopes, an electron beam scans across the substrate surface and exposes electron sensitive coating. Pros ? Computercontrolled beam ? No mask is needed ? Can produce sub1 181。 C~1200176。 C ) 5um~50um polySi 2224 2HS iOOS iH ???P o ly S iS iH ?424334
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