外文翻譯---富士igbt模塊應(yīng)用手冊(cè)(已修改)
2025-01-29 23:26 本頁面
【正文】 附錄AFuji IGBT Modules Application ManualPower converters, such as variablespeed motor drives and uninterruptible power supplies for puters, were revolutionized with the introduction of bipolar power tr ansistor modules and power MOSFETs. The demand for pact, lightweight, and ef ficient power converters has consequently also promoted the rapid development of t hese switching devices. Bipolar transistor modules and MOSFETs however, cannot fully satisfy the demands of these power converters. For example, while bipolar power transistor modules can withstand high voltages and ontrol large currents, their switch ing speed is rather slow. Conversely, power MOSFETs switch fast, but have a low wi th stand voltage and current capacity.Therefore, to satisfy these requirements, the insulated gate bipolar transistor (IG BT) was IGBT is a switching device designed to have the highsp eed switching performance and gate voltage control of a power MOSFET as well as the highvoltage / largecurrent handling capacity of a bipolar transistor.Compares the basic structure of an IGBT and a power IGBT is characterized by a p+layer added to the drain side of the power MOSFET is this p+layer that enables the various IGBT features explained in this manual.As shown in ,the ideal IGBT equivalent circuit is a monolithic BiMOS transistor in which a pnp bipolar transistor and a power MOSFET are darlington a positive voltage between the gate and the emitter,awitches on the MOSFET and produce a low resistance effect between the base and the collector of pnp transistor,thereby switching it on.When the applied votage between the gaate and the emitter is set to”0”,the MOSFET will switch odd, causing the supply of base current to the pnp transistor to stop and thereby switching that off as well.This means that an IGBT can be switched on and off using voltage signals in the same way as a power MOSFET. Like the power MOSFET, a positive voltage between the gate and the emitter produces a current flow through the IGBT, switching it on. When the IGBT is on, positive carriers are injected from the p+layer on the drain side into the ntype bases layer, thereby precipitating conductivity modulation. This enables the IGBT to achieve a much lower onresistance than a power MOSFET.The IGBT has a very low on resistance for the following reasons:A power MOSFET bees a singlelayer semiconductor (ntype in the diagram) when it is in the onstate, and has resistor characteristics between the drain and the source. The higher the breakdown voltage and the device, the thicker the nlayer has to be, but this results in an increased drainto
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