【正文】 解的。在整個(gè)畢業(yè)設(shè)計(jì)過(guò)程中，我得到了許多人的幫助，在每一階段的檢查中都給我提出了寶貴的建議，特別在論文撰寫的最后關(guān)頭，得到教學(xué)秘書趙立新老師的幫助，在此一并感謝。參考文獻(xiàn)[1] 孫余凱．穩(wěn)壓電源設(shè)計(jì)與技能實(shí)訓(xùn)教程．電子工業(yè)出版社，2007：4458[2] 楊素行．模擬電子技術(shù)基礎(chǔ)簡(jiǎn)明教程．高等教育出版社，2007：279424[3] 余孟嘗．?dāng)?shù)字電子技術(shù)基礎(chǔ)簡(jiǎn)明教程．高等教育出版社，1999：379420[4] 李清泉、黃昌寧．集成運(yùn)算放大器原理與應(yīng)用．北京：科學(xué)出版社，1980：55356[5] 周惠潮．常用電子器件及典型應(yīng)用．西安：電子工業(yè)出版，2007：3789[6] 戴餛．我國(guó)電機(jī)保護(hù)現(xiàn)狀與發(fā)展趨勢(shì)．陶瓷研究與職業(yè)教育出版社，2004：5599[7] 沈標(biāo)正．電機(jī)故障診斷技術(shù)．機(jī)械工業(yè)出版社，1996：2276[8] 柯南．非常電路圖設(shè)計(jì)．中國(guó)鐵道部出版社，2000：56231[9] 潘平中．整流電路．電子制作．2010年7月．196期：65[10] Barry Brants and Mart Williams．用于電源、繼電器和螺線管的協(xié)同式線路保護(hù)．世界電子元器件．2010年10月．185期：3334附錄1 譯文自1958年美國(guó)德克薩斯儀器公司(TI)發(fā)明集成電路（IC）后，隨著硅平面技術(shù)的發(fā)展，二十世紀(jì)六十年代先后發(fā)明了雙極型和MOS型兩種重要的集成電路，它標(biāo)志著由電子管和晶體管制造電子整機(jī)的時(shí)代發(fā)生了量和質(zhì)的飛躍。由MOS管構(gòu)成的集成電路稱為MOS集成電路，而由PMOS管和NMOS管共同構(gòu)成的互補(bǔ)型MOS集成電路即為 CMOSIC（ Complementary MOS Integrated Circuit）。CMOS電路的單門靜態(tài)功耗在毫微瓦（nw）數(shù)量級(jí)。 以下比較兩者性能，大家就知道其原因了。 集成電路中詳細(xì)信息： 1．TTL電平： 　　輸出高電平,輸出低電平。最小輸入高電平和低電平：輸入高電平=，輸入低電平=。而且具有很寬的噪聲容限。 4．驅(qū)動(dòng)門電路 　　OC門，即集電極開路門電路，OD門，即漏極開路門電路，必須外接上拉電阻和電源才能將開關(guān)電平作為高低電平用。 5．TTL和CMOS電路比較： 　　1）TTL電路是電流控制器件，而CMOS電路是電壓控制器件。 CMOS電路的速度慢，傳輸延遲時(shí)間長(zhǎng)(2550ns),但功耗低。3）CMOS電路的鎖定效應(yīng)附錄2 英文參考資料Since 1958 the United States Texas Instrument Company ( TI ) invented the integrated circuit ( IC ), with the silicon plane technique development, nineteen sixties has invented a bipolar type and MOS type two important integrated circuit, it is marked by a tube or a transistor manufacturing electronic times of occurrence of the quantitative and qualitative leap.MOS is: metal oxide semiconductor ( MetalOxideSemiconductor ) transistor structure referred to as the MOS transistor, a P type MOS and type N MOS pipe branch. By MOS pipe integrated circuit called a MOS integrated circuit, and the PMOS pipes and NMOS pipes together constitute a plementary MOS integrated circuit is CMOSIC ( Complementary MOS Integrated Circuit ).The current digital integrated circuit conductive types can be divided into bipolar integrated circuit ( mainly TTL ) and bipolar integrated circuit ( CMOS, NMOS, PMOS etc.). CMOS circuit with static power dissipation in the NW ( NW ) orders of magnitude.Development of CMOS than TTL late, but with its high superiority in many occasions gradually replaced the TTL.The parison of performance between, everyone will know the reason. is a field effect transistor, TTL bipolar transistor. logic level range is relatively large ( 5 ~ 15V ), TTL can only work on the 5V level is relatively large, strong antiinterference, TTL is relatively small, poor capacity of resisting disturbance with small power consumption, high power consumption ( TTL 1 ~ 5mA / door )The working frequency of is TTL slightly low, but high speed CMOS speed and TTL almost.Integrated circuit in detail: level:High level output , output low level. At room temperature, the general high level output voltage is , output low level. The minimum input high level and low level: high level input = , low level input = , noise margin is . level:Logic level voltage to a power supply voltage, a 0 logic level close to 0V. And has very wide noise margin.3 level conversion circuit:Because TTL and CMOS level values are not the same ( TTL 5V = = CMOS ) are connected to each other, so need level conversion: is to use two resistance to the level of tension, no advanced things.The 4 driving circuitOC doors, which open collector gate circuit, OD doors, which open drain gate circuit, must be external pull up resistor and the power supply can be used as a high level switch level. Otherwise it is generally just as switch high voltage and large current load, so they called the driving gate circuit. and CMOS circuit parison:1) TTL circuit is a current controlling device, and the CMOS circuit is a voltage control device.2) TTL circuit transmission speed, short delay time ( 510ns ), but the large power consumption.CMOS circuit speed slow, long transmission delay time ( 2550ns ), but the low power consumption. CMOS circuit consumption itself and the input signal pulse frequency, the higher the frequency, the more heat the chip set, which is a normal phenomenon.3) CMOS circuit locking effect.附錄 3 整機(jī)電路原理圖附錄 4 元器件表序號(hào)名稱代號(hào)規(guī)格型號(hào)數(shù)量1電阻、Ⅱ22電阻、Ⅱ23電阻、Ⅱ34電阻、Ⅱ25電阻、Ⅱ26電阻Ⅱ17電阻Ⅱ18電阻Ⅱ19電阻Ⅱ110電位器Ⅱ111電位器Ⅱ112電位器Ⅱ113電容、CD1150V47uFⅡ214電容、CD1150V10uFⅡ315電容CD1150V1uFⅡ116電容CD1125V33uFⅡ117電容CD1116V100uFⅡ118電容CD1116V1uFⅡ119電容CD1116V47uFⅡ120電容CD1125V47uFⅡ121電容Ⅱ122電容Ⅱ123二極管、IN4148224穩(wěn)壓二極管2CW59125三極管、3DG6B226三極管C8050127與非門、CD4011228集成芯片NE555129集成芯片CW7824130繼電器KJQW13F24Ⅱ131整流硅橋KBP210AC220V/DC27V132電源變壓器TAC220V/AC24V3W1