東南大學(xué)電子器件-金半接觸-展示頁(yè)
2025-08-02 20:06本頁(yè)面
【正文】 um outside the semiconductors.(Si=) )(00FsCsCFmmEEqqEEqEEq???????????? Four sets of bination: ? (1)metaln type semiconductor, q?m q?s ? (2)metaln type semiconductor, q?m q?s ? (3)metalp type semiconductor, q?m q?s ? (4)metalp type semiconductor, q?m q?s ? Two kinds of MS contacts will occur: rectifying and ohmic ? The rectifying contact is similar to the pn junction in function.(diode) ? The ohmic contact is usually used to connect semiconductors to electrodes or wires.(resistor) （ 1） q?mq?s Metal/ntype semiconductor 2. Schottky barriers（肖特基勢(shì)壘） charge transfer occurs until the Fermi levels align at equilibrium )()(??????????sFscsmFmFsqEEqEE? the electrostatic potential of the semiconductor must be raised V0 ? the electron energy must be lowered. –qV0 ? the depletion region is formed near the junction. ? Contact potential barrier: qV0=q?mq?s ? potential barrier height q?B= q?mq? ΦB is called Schottky barrier )()(??????????sFscsmFmFsqEEqEE（ 2） Metal/p type semiconductor, q?mq ?s ?Electrons flow from metal to semiconductor till the Fermi levels align at equilibrium ? the electrostatic potential of the semiconductor must be lowered V0 ? the electron energy must be raised –qV0 ? the depletion region is formed near the junction. ? Contact potential barrier: qV0=q?sq?m V0 retards hole diffusion from the semiconductor to the metal Rectifying contacts(diode) You can treat the Schottky barrier for M/ntype S (or M/ptype S) as the P+N (or N+P)junction except that no hole injection occurs from the
語(yǔ)文相關(guān)推薦
鄂ICP備17016276號(hào)-1