東南大學(xué)電子器件-金半接觸(已修改)
2025-08-05 20:06 本頁面
【正文】 acceptor 受主 donor 施主 rebination 復(fù)合 majority 多子 minority 少子 transition region 過渡區(qū) depletion region 耗盡區(qū) contact barrier 接觸勢壘 pn junction pn結(jié) heterojunction/異質(zhì)結(jié) EHP 電子空穴對 homojunction/同質(zhì)結(jié) Schottky barrier /肖特基勢壘 barrier height/勢壘高度 ideal/理想的 work function/功函數(shù) practical/實際的 electron affinity/電子親和能 Fermi level/費米能級 rectifier /整流器 electrostatic potential/靜電勢 breakdown /擊穿 rectifying contacts/整流接觸 Ohmic contacts/歐姆接觸 surface state/表面態(tài) latticematched/晶格匹配的 tunneling effect/隧道效應(yīng) 半導(dǎo)體器件工作的基本方程 泊松方程 電流密度方程 電流連續(xù)性方程 pppnnnpnpppnnnADsJqRGtpJqRGtnJJJpqDqpJnqDqnJnpNNqrr????????????????????????????????11)()()(02???????????Many of the useful properties of a pn junction can be achieved by simply forming an appropriate metalsemiconductor(MS) contact. MetalSemiconductor junctions or contacts(金屬 半導(dǎo)體結(jié)、金 半接觸） Schottky Barriers ? Possibly, in retrospect, Schottky39。s most important scientific achievement was to develop (in 1914) the wellknown classical formula, now written q2/4πε0x, for the interaction energy between a point charge q and a flat metal surface, when the charge is at a distance x from the surface. Owing to the method of its derivation, this interaction is called the image potential energy (image PE). Schottky based his work on earlier work by (Lord) Kelvin relating to the image PE for a sphere. Schottky39。s image PE has bee a standard ponent in simple models of the barrie
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