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sic陶瓷的高壓燒結(jié)工藝及性能_本科畢業(yè)論文-展示頁(yè)

2024-09-13 16:39本頁(yè)面
  

【正文】 pressure sintering process and the performance of SiC ceramics has carried on the preliminary research, and has carried on the theoretical analysis, to explore the relationship between its microstructure and properties. Through the relative density of SiC ceramic pound phase spectrum and XRD analysis, found that high pressure sintering SiC ceramic material with excellent performance, mainly reflected in the performance of thermal conductivity and toughness in, has the good application prospect. Compared with normal pressure, high pressure sintering can effectively reduce metal sintering time and sintering the ceramic system, promote densification, and thus achieve the purpose of improving performance. Cubic high pressure sintering technology is a fast and efficient sintering technology, greatly reducing the sintering temperature and shorten the sintering time, and SiC 陶瓷的高壓燒結(jié)工藝及性能材料專(zhuān)業(yè)本科畢業(yè)論文 河 III close to the theoretical density of the posite ceramic materials can be prepared. Using high pressure sintering process can be obtained by sintering without sintering aids added high density SiC ceramics (density of 92% to 100%). Sintering properties of ceramics have a significant impact, the experimental results show that: Al2O3 sintered SiC is effective sintering aids, in the low dosage (about 2wt%) to achieve a fully dense sintered ceramic. The sintering process is similar with added the sintering aids Ceramics pure SiC sintered similar, but the density of the ceramic is generally higher. Keywords: SiC ceramics, high temperature and high pressure technology, sintering properties, phase analysis (XRD spectra) SiC 陶瓷的高壓燒結(jié)工藝及性能材料專(zhuān)業(yè)本科畢業(yè)論文 河 i 目錄 1 緒論 ..............................................................................................................1 引言 ......................................................................................................1 的簡(jiǎn)介 ............................................................................................2 的結(jié)構(gòu)及性能 .....................................................................2 SiC 粉體的制備方法 ................................................................2 燒結(jié)方法 ........................................................................................8 反應(yīng)燒結(jié) ...................................................................................8 再結(jié)晶燒結(jié)法 ...........................................................................9 硅滲 SiC 燒結(jié)技術(shù) ...................................................................9 等離子體電火花燒結(jié)( SPS) .................................................9 常壓燒結(jié) .................................................................................10 高壓燒結(jié)法 .............................................................................10 碳化硅陶瓷的應(yīng)用 ............................................................................ 11 陶瓷的研究現(xiàn)狀 .......................................................................... 11 本課題的研究任務(wù)和內(nèi)容 ................................................................12 2 高溫高壓技術(shù) ............................................................................................13 引言 ....................................................................................................13 高溫高壓設(shè)備 ....................................................................................13 壓力和溫度控制系統(tǒng) ........................................................................15 壓力控制系統(tǒng) .........................................................................15 溫度控制系統(tǒng) .........................................................................15 壓力的標(biāo)定和油壓控制 ....................................................................16 壓力的標(biāo)定 .............................................................................16 油壓的控制 .............................................................................18 SiC 陶瓷的高壓燒結(jié)工藝及性能材料專(zhuān)業(yè)本科畢業(yè)論文 河 ii 溫度的標(biāo)定 ........................................................................................19 腔體材料的選擇 ................................................................................20 加熱源材料的選擇 ............................................................................22 3 實(shí)驗(yàn)原料及實(shí)驗(yàn)方法 ................................................................................23 實(shí)驗(yàn)原料 ............................................................................................23 粉末 ...................................................................................23 其他原料 .................................................................................23 實(shí)驗(yàn)方法 ............................................................................................23 試樣制備 .................................................................................23 高壓燒結(jié)制度 .........................................................................24 陶瓷材料研究技術(shù)路線 ..............................................................25 性能測(cè)試 ............................................................................................26 包套去除及分析樣加工 .........................................................26 根據(jù)阿基米德原理測(cè)樣品的密度(排水法) .....................26 物相分析 .........................................................................27 4 SiC 陶瓷的高壓燒結(jié) .................................................................................28 引言 ....................................................................................................28 未添加燒結(jié)助劑時(shí)溫度、時(shí)間對(duì)陶瓷燒結(jié)性能的影響 ................28 燒結(jié)溫度對(duì)陶瓷燒結(jié)性能的影響 .........................................28 燒結(jié)時(shí)間對(duì)陶瓷燒結(jié)性能的影響 .........................................29 添加燒結(jié)助劑對(duì)陶瓷燒結(jié)性能的影響 ............................................30 燒結(jié)助劑添加量對(duì)陶瓷燒結(jié)性能的影響 .............................31 燒結(jié)溫度對(duì)陶瓷燒結(jié)性能影響 .............................................33 燒結(jié)時(shí)間對(duì)陶瓷燒結(jié)性能的影響 ...........................
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