【正文】 wafer substrate Activation Step Figure 169。 2023 by Prentice Hall Semiconductor Manufacturing Technology by Michael Quirk and Julian Serda Group III (ptype) Boron 5 Aluminum 13 Gallium 31 Indium 49 Group IV Carbon 6 Silicon 14 Germanium 32 Tin 50 Group V (ntype) Nitrogen 7 Phosphorus 15 Arsenic 33 Antimony 51 Acceptor Impurities Donor Impurities Semiconductor * Items underlined are the most monly used in siliconbased IC manufacturing. Silicon Dopants Figure 169。 2023 by Prentice Hall Semiconductor Manufacturing Technology by Michael Quirk and Julian Serda Donor atoms provide excess electrons to form ntype silicon. Phosphorus atom serves as ntype dopant Excess electron () Si Si Si Si Si Si Si Si Si Si Si Si Si Si Si Si Si Si Si Si Si Si P P P Electrons in NType Silicon with Phosphorus Dopant Figure 169。 2023 by Prentice Hall Semiconductor Manufacturing Technology by Michael Quirk and Julian Serda Conduction in nType Silicon Free electrons flow toward positive terminal. Positive terminal from power supply Negative terminal from power supply Figure 169。 2023 by Prentice Hall Semiconductor Manufacturing Technology by Michael Quirk and Julian Serda Acceptor atoms provide a deficiency of electrons to form ptype silicon. + Hole Boron atom serves as ptype dopant Si Si Si Si Si Si Si Si Si Si Si Si Si Si Si Si B Si Si Si Si Si Si B B Holes in pType Silicon with Boron Dopant Figure 169。 2023 by Prentice Hall Semiconductor Manufacturing Technology by Michael Quirk and Julian Serda Conduction in pType Silicon Positive terminal from voltage supply Negative terminal from voltage supply +Holes flow toward negative terminal Electrons flow toward positive terminal Figure 169。 2023 by Prentice Hall Semiconductor Manufacturing Technology by Michael Quirk and Julian Serda Silicon Resistivity Versus Dopant Concentration Redrawn from VLSI Fabrication Principles, Silicon and Gallium Arsenide, John Wiley Sons, Inc. Dopant Concentration (atoms/cm3) Electrical Resistivity (ohmcm) 1021 1020 1019 1018 1017 1016 1015 1014 1013 103 102 101 100 101 102 103 ntype ptype Figure 169。 2023 by Prentice Hall Semiconductor Manufacturing Technology by Michael Quirk and Julian Serda ptype Si ntype Si Cross Section of Planar pn Junction Figure 169。 2023 by Prentice Hall Semiconductor Manufacturing Technology by Michael Quirk and Julian Serda Alternative Semiconductor Materials Com p ar is on o f S om e P h ys ica l P r o p e r t ies f o r S e m ic on d u c t o r M at e r ia lsP r o p e r t y Si Ge G aAs S iO 2M e l t in g p o in t( ? C)1412 937 12381700( a ppr o x . )A to m ic We ig h t 28. 09 72. 60 144. 63 60. 08A to m ic De n s i t y( a to m s /c m3)4. 99 x 10224. 42x 1 0222. 21x 1 0222. 3x 1022E n e r gy B a n dGa p ( e V)1. 11 0. 67 1. 408( a ppr o x . )Table 169。 2023 by Prentice Hall Semiconductor Manufacturing Technology by Michael Quirk and Julian Serda Chapter 2 Review ? Summary 41 ? Key Terms 41 ? Review Questions 42 ? References 42 169。 2023 by Prentice Hall Semiconductor Manufacturing Technology by Michael Quirk and Julian Serda 謝謝觀看 /歡迎下載 BY FAITH I MEAN A VISION OF GOOD ONE CHERISHES AND THE ENTHUSIASM THAT PUSHES ONE TO SEEK ITS FULFILLMENT REGARDLESS OF OBSTACLES. BY FAITH I BY FAIT