多晶硅太陽能電池文獻(xiàn)翻譯中英文對照(編輯修改稿)
2025-01-11 05:17 本頁面
【文章內(nèi)容簡介】 serious silicon surface damage, the battery open circuit voltage and fill factor decreased. （ 4） produced antireflection film For efficient solar cells, the most mon and most effective way is to doublelayer antireflection coatings deposited ZnS/MgF2, its optimal thickness depends on the thickness of the oxide layer below the surface characteristics and battery, for example, the surface is smooth or textured surface， antireflection technology has evaporated Ta2O5, PECVD deposition Si3N3 so. ZnO conductive film can be used as antireflective material. 2. Metallization In the efficient production of the battery, the metal electrode to the battery design parameters such as surface doping concentration, PN junction depth, the metal 無 錫 職 業(yè) 技 術(shù) 學(xué) 院 畢業(yè)設(shè)計(jì)說明書（英文翻譯） 4 material to match. General area of small laboratory cell (area less than 4cm2), so they need small metal gate line (less than 10 microns), the general approach to lithography, electron beam evaporation, production of industrial plating process is also used, but the bination of evaporation and lithography, do not belong to lowcost technology. 3. PN junction formation technology （ 1） emitter formation and phosphorus gettering For efficient solar cells, emitter diffusion formation of choice monly used in the formation of heavy metal impurities in the region below the electrode in the spread between the electrodes to achieve light levels, the shallow emitter diffusion is increased concentration of cell response to blue light, and also allows silicon surface easily passivated. Twostep diffusion method diffusion process, diffusion process and increase corrosion buried diffusion process. Currently used selection proliferation, 15 15 cell conversion efficiency of %, n + +, n + sheet resistance of the surface region were 20Ω and 80Ω. For McSi materials, expansion of phosphorus gettering effect on the battery has been widely studied, a longer period of phosphorus gettering process (usually 3 to 4 hours), make some of McSi of the minority carrier diffusion length increase of two orders of magnitude. （ 2） the formation of back surface field and aluminum gettering In McSi cell, the back p + p junction by the formation of uniform diffusion of aluminum or boron, boron source is generally BN, BBr, APCVD SiO2: B2O8 such as evaporation or diffusion of aluminum screen printing of aluminum, 800 degrees pleted sintering , on the role of aluminum gettering carried out extensive research, and in different phosphorus diffusion gettering, aluminum gettering at a relatively low temperature. Physical defects which also involved
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