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the first variant is in the lowprofile metalceramic housing. The second variant is RSD fabricated without housing and with additional protection of periphery area from external action.Dinistors placed into housing can be used for work under as mono pulse mode and repeated pulse mode. If repeatedpulsed mode using the forced cooling of semiconductor devices and using of heatsinks to both side of pellet must be made. Dinistors without housing connects in series, and such assembly could be placed into a single pact housing. However, such assembly can work under monopulse mode only.Operating voltage for switch typically exceeds blocking voltage of single RSD (≤2400V), thus switch is included several RSDs connected in series. . Reverse – switched dinistors for peak current from 200 kA to 500 kA and blocking voltage of 2400 V, encapsullated in hermetic metal – ceramic housing and without housing (RSD sizes of 64, 76, and 100 mm).Number of RSDs included in assembly depends on operating voltage of switch. Therefore, technical problem of switch development is mainly optimization of design for assembly of several dinistors connected in series. A lot of special investigations have carried out such as choice of optimum materials to provide best contacts between RSDs, calculation of dynamic forces to clamp assembly, etc. These investigations are provided small and stable transition electrical and thermal resistances between RSDs that guarantees long and reliable performance of switch. Especial puter technique has developed to select RSDs for connection in series. At this RSD selection value of leakage current and stability of blocking voltamps diagram are measured especially. This selection technique is allowed exclude the voltage dividers using for equalization of static voltage for each RSD at assembly. Thus, after such selection switch design can simplify, sizes of switch are increased approximately in times, and cost of switch is increased too.This solid state switch has operating voltage of up to 25 kVdc, operating peak current of up to 300 kA at current pulse duration of up to 500 μs. RFNCVNIIEF plans to use such switch at capacitor bank of laser facility “Iskra6”. This switch is included 15 RSDs with size of 76 mm and blocking voltage of kV connected in series and encapsullated into dielectric housing. Very high level of switched power density per volume unit has reached by this switch design. This value is of W/, and this value is exceeded in the several times the same switches based on pulse thyristors.Triggering of all RSDs in switch is provided by the single trigger generator which connected to switch in parallel. Triggering current passes simultaneously through all RSDs connected in series. Such triggering type is allowed to increase efficiency and reliability of triggering circuit for this switch, and this is one more advantage of RSD –switch pared to switch based on thyristors.For new generation of RSD trigger current has peak value between kA at pulse duration between – 2 μs. These values are less in 23 times pared to values of trigger current for RSD of the first generation.IV. Conclusion Next generation of reverseswitched dinistors and RSD – switches has been developed Tests of these switches are shown that all – time high level of switched power density per volume unit has reached. The switches are able to work under as monopulse and pulserepeated modes and suitable for many applications of pulsed power.應(yīng)用于脈沖電源設(shè)備的新一代高功率半導(dǎo)體關(guān)閉開關(guān)1 導(dǎo)言 Solid state semiconductor switches are very固態(tài)半導(dǎo)體開關(guān)普遍使用在脈沖功率系統(tǒng),因?yàn)閠hese switches have high reliability, long lifetime,這些開關(guān)具有可靠性高,壽命長, low costs during using, and environmental safety使用成本低,并且due to mercury and lead are 。Semiconductor半導(dǎo)體switches are able to work in any position, so, it is開關(guān)可以在任何位置工作,所以,它可以possible to design systems as f