【文章內(nèi)容簡介】 最后經(jīng)過抽樣判決電路整形后可以再生數(shù)字基帶脈沖。經(jīng)過一個學(xué)期的時間，終于完成這次基于 Multisim 的鎖相解調(diào)系統(tǒng)設(shè)計的畢業(yè)設(shè)計任務(wù)。我首先查閱了大量的書本資料，接著又上網(wǎng)搜集了許多有用信息，有時候為了找到一個合適的電路而苦惱，有時候又為取得一點成功而由衷的高興。當最終的電路方案設(shè)計出來以后，我請教了我的指導(dǎo)老師何老師及學(xué)的比較好的同學(xué)，他們的一個小小指點就給我們很大啟示和靈感，對我的電路圖提出了很多有價值的建議，在此對熱心幫助我的老師和同學(xué)表示衷心感謝。在此次畢業(yè)設(shè)計中，我充分體會到了熟練運用相關(guān)軟件的重要性，不像以前做的課程設(shè)計，并沒有多少工作在計算機里實現(xiàn)的，就僅僅畫出了電路圖之后用元器件在面包板上搭電路就行了。本次畢業(yè)設(shè)計都高度依賴計算機，從仿真到繪制原理圖，再到參數(shù)調(diào)節(jié)，可以說每一步都很艱難，每一步都是我一步一個腳印結(jié)結(jié)實實踩下去的。通過畢業(yè)設(shè)計，我增強了對通信電子技術(shù)的理解，學(xué)會查尋資料﹑比較方案，學(xué)會通信電路的設(shè)計﹑計算；進一步提高分析解決實際問題的能力，創(chuàng)造一個動腦動手﹑獨立開展電路實驗的機會，鍛煉分析﹑解決通信電子電路問題的實際本領(lǐng)，真正實現(xiàn)由課本知識向?qū)嶋H能力的轉(zhuǎn)化；通過典型電路的設(shè)計與仿真加深對基本原理的了解，增強了實踐能力。蘭 州 理 工 大 學(xué) 畢 業(yè) 設(shè) 計參考文獻[1]． 熊偉 候傳教. Multisim7 電路設(shè)計及仿真應(yīng)用[M]. 清華大學(xué)出版社，2022[2]． 陽昌漢. 高頻電子線路[M]. 高等教育出版社，2022[3]． 吳運昌. 模擬集成電路原理與應(yīng)用[M]. 華南理工大學(xué)出版社，2022[4]． 沈偉慈. 通信電路[M]. 西安電子科技大學(xué)出版社，2022[5]． 李爭. 低噪聲電荷泵鎖相電路設(shè)計理論與技術(shù)，2022[6]． 鄭繼禹, 張厥盛, 萬心平. 鎖相環(huán)原理與應(yīng)用[M]. 人民郵電出版社，1984[7]． Floyd ,Phase lock Techniques(Second Edition),Publication:New York,John Wiley,1979.[8]． Roland ,Phaselocked Loops Design,Simulation and Application,清華大學(xué)出版社，2022[9]． 張輝，曹麗娜.. 現(xiàn)代通信原理與技術(shù)[M]. 西安電子科技大學(xué)出版社，2022[10]．鄭繼禹, 張厥盛, 萬心平. 鎖相技術(shù)[M]. 西安電子科技大學(xué)出版社，1994[11] ,[12] Best,Roland E.,Phase—Looked Loop Theory,Design and Applications McGRAW—Hill,1984[13] ，2022蘭 州 理 工 大 學(xué) 畢 業(yè) 設(shè) 計附錄：(外文翻譯)Bridging the Gap between the Analog and Digital WorldsMost applications require the coexistence of analog and digital functionality, and the benefits of bining this functionality on a single chip are significant. Such mixedsignal integration, however, also presents significant challenges. Furthermore, digital and analog developments tend to evolve at differing rates, yet mixedsignal solutions for markets such as industrial, automotive and medical, must remain available over significant time periods. The latest mixedsignal semiconductor processes are helping to address some of these issues, and this article will look at some of the issues designers should consider when specifying integrated mixedsignal solutions.Mixedsignal solution for the real worldSystem designers often partition the digital portion from the analog section of a given design for a variety of reasons: the availability of mixing ponents for the two technologies, the plexity of the digital design or again because of the existence of pure digital processing parts as standard products. Placing the analog elements in an integrated circuit definitively allows the system designer to optimize the costs of its entire module. This integration approach is usually difficult for advanced markets such as telemunications or puters, but makes sense for more mature or conservative markets such as automotive, medical and industrial. For most of these mature market’s applications, digital functions are finding their way onto what once were pure analog designs. Adding digital functions to an analog design is helped in part by the development of new process technologies that can handle both shortchannel, fastswitching digital transistors as well as highvoltage analog transistors. For example, AMI Semiconductor’s latest mixedsignal technology offers digital and analog integration capabilities on the same design platform. The I3T technology family is based on standard CMOS ?181。m, limiting the maximum gate voltage to ?V. Some consider this technology outdated, from a pure digital designer’s point of view, but it is at the forefront for the automotive, industrial and medical markets.蘭 州 理 工 大 學(xué) 畢 業(yè) 設(shè) 計This list of optional features that enables the design of real SoCs includes high voltage interfacing up to 80?V, microprocessing capabilities up to 32 bits, wireless capabilities up to ?GHz, and dense logic design up to 15?K gates/mm2. Beside these capabilities, NVM integration is possible: E2PROM up to 4 Kbytes, Flash memory up to half a megabit or OnTimeProgrammable (OTP) cells for application calibrations. The ability to integrate all these features on a chip gives the customer the possibility to be independent from the obsolescence of the standalone NVM market, which is more or less driven by the puter market. This advantage is quite relevant when we consider the cost of requalifying a module for the OEMs in automotive, for instance. It also makes sense when considering the long lifespan of the applications embedded into cars, the industrial environment or medical selftreatment devices where patient cost is an important consideration.Nevertheless bridging the gap from digital to analog on a single chip does not occur without issues. Clocking noise from highspeed digital circuits, for instance, often interferes with noisesensitive analog functions. In addition, switching currents from highpower analog functions can interfere with lowvoltage digital processors. The goal is to protect lowvoltage transistors from the electric field effects of voltages that are 10 to 30 times higher.These important issues are not without solutions. For example, one of the latest releases in the I3T family, the I3T50 DTI, uses a deep trench isolation technique. This technique uses a series of isolating trenches that bury deep into the IC substrate。 effectively creating onchip “pockets” where noise and power supply parameters are carefully controlled.On top of its protection skills, the deep trench technology also helps to minimize die area by allowing dense packing of highvoltage analog pockets with lowvoltage regions. You can obtain improvements in die area of 10 to 60 percent over designs that use standard junction isolation techniques.As mentioned earlier, the reason that system designers are using deep submicron technologies in those markets is often linked to the availability of devices in those technologies, not the plexity of the application itself. The plexity can be handled in many cases by an 8bit microcontroller, or 32bit for highend applications. Products such as 蘭 州 理 工 大 學(xué) 畢 業(yè) 設(shè) 計the ?181。m I3T