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【文章內(nèi)容簡(jiǎn)介】 t on top of glassivated portion of the die are acceptable). 液 體 水 滴 化 學(xué) 污 點(diǎn) 光 致 抗 蝕 劑 GaAs (requirement only) There shall be no cracking or chipping within active circuit area. There shall be no chipouts that extend beyond 50 percent of the substrate thickness or cracks in side walls greater than mils. Silicon: Shall have a visible line of separation between bond pads and/or operating metallization Bridging and shorting 連 結(jié) 短 路 墊 ACTIVE CIRCUIT – All areas from outside edge of the bond pads inward, except where there is an active line in the design located beyond the outside edge of the bond pads. DIFFUSION Electrical isolation of one or more active circuits. GLASSIVATION – Top layer of transparent insulating material that covers active area except for bond pads. PASSIVATION LAYER Insulating material on die prior to deposition of metal or between metal layers. Note: Some die by design may not have a glassivation la
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